Nondegenerate P‐Type In‐Doped SnS₂ Monolayer Transistor

Abstract

Doping can change the intrinsic properties of 2D materials by tuning their electronic structure. In this work, high‐quality 2D In‐doped SnS2 (In‐SnS2) monolayer is reported through chemical vapor transport method and following mechanical cleavage process. The In content of In‐SnS2 is ≈0.9%, and doping results in the downward shift of the Fermi level compared with the undoped one. Transmission electron microscopy images show that doping is uniform in the In‐SnS2 nanosheets with high quality. The In‐SnS2 monolayer field effect transistors (FETs) show p‐type feature which is different from the n‐type feature of undoped SnS2. The average hole produced by one In atom is estimated as 0.37 from FETs measurement. Density functional theory calculations show that the decreasing of hole concentration results from the hole killing mechanism induced by S vacancy. The results suggest that changing the polarity of 2D semiconductor by doping is successful, and In‐SnS2 monolayer has great potential in the applications of electronics and optoelectronics.

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

“…Many experimental advancements are still in need of in‐depth analysis. [ 307 ] This is a serious oversight as the underneath physical origins of exceptional findings are fundamental to the design and implementation of future electronic and optoelectronic devices based on 2DLM alloys.…”

Recent advances of substitutionally doped tin dichalcogenides

“…In addition, In doping introduces holes, 73,74 leading to a p-type character. Li et al investigated the performance of 0.9% In-doped SnS 2 and pure SnS 2 and confirmed that the In-doped SnS 2 turned into a p-type semiconductor 48 [Fig. 7(c) and (d)].…”

p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices

“…Except for the application in electronic devices, TMDC doping has also been widely investigated in optoelectronic devices, for [54,67,69,70,72,94,100,117,126,134,137,140,147,148,156,170,171,175,181,182,186,196,220] instance, photodetectors and LEDs [222,223]. According to the difference in photoelectric conversion mechanism, TMDCbased photodetectors consist of photoconductors, photodiodes, and phototransistors, of which general device structures and channel doping levels are shown in Figs.…”