Nondestructive evaluation of channel carrier concentration in modulation-doped InAlAs/InGaAs field-effect transistor structures by room-temperature photoluminescence

Abstract

Comparative study of surface recombination in hexagonal GaN and ZnO surfaces J. Appl. Phys. 112, 063509 (2012) Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy J. Appl. Phys. 112, 063510 (2012) Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots J. Appl. Phys. 112, 063506 (2012) Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Appl. Phys. Lett. 101, 113108 (2012) Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on siliconThe sheet carrier concentration ͑Ns͒ of channel layers in modulation-doped InAlAs/InGaAs heterostructure field-effect transistor ͑HFET͒ structures with n ϩ InGaAs contact layers has been successfully and nondestructively determined using the room-temperature photoluminescence ͑PL͒ method. It is found that the spectral energy width between the maximum position of the main PL peak around 0.8 eV and the half-maximum position on the higher energy side has a good positive linear correlation with the Ns of the channel measured by the van der Pauw method. The scattering of the data is less than Ϯ3ϫ10 11 cm Ϫ2 . The determination of Ns is effective even if the HFET structures have not only n ϩ InGaAs contact layers but also layers for InAlAs Schottky level-shift diodes. From a comparison with low-temperature PL spectra, the main PL peak is attributed to the e 2 h transition in the quantum well of the channel. It is considered that the slope of the peak stretches further to the high energy as the Fermi energy in the channel become higher, i.e., as the Ns becomes larger.

Optimization of InxGa1−xAs/InyAl1−yAs high electron mobility transistor structures grown by solid-source molecular beam epitaxy

“…The highest product of (n s ) was achieved when the doping concentration was 6 ϫ10 12 cm Ϫ2 . The value obtained was 4.36ϫ10 16 /V s at room temperature, which is among the best ever reported for a similar structure. [11][12][13] Double-side-doped ͑DH͒-HEMT structures are attractive for high power applications as they provide higher current handling capability and better linearity.…”

“…The maximum value of the product (n s ) achieved was 4.98ϫ10 16 /V s at room temperature when the ␦-doping concentration was 5ϫ10 12 cm Ϫ2 at the top of the channel and 1ϫ10 12 cm Ϫ2 at the bottom. This value is higher compared to that of the SH-HEMT structure, which is useful for higher device current handling capability.…”

“…These characteristics are very similar to that reported by Watanabe and Yokoyama. 16 The full width at half maximum ͑FWHM͒ ⌬E of the PL peak can be used to deduce the 2DEG electron density, 17,18 and for an ideal 2DEG model…”

Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers

“…The PL was excited by an Ar ion laser beam at 514.5-nm wavelength, which was focused on the sample surface to a diameter of about 500 mm at about 3 mW of power. 17,18) The PL signals were detected by a cooled PbS photoconductive cell attached to the spectrometer. The PL samples were kept in an electrically cooled cryostat at 6 K.…”