Nondestructive visualization of threading dislocations in GaN by micro raman mapping

Kokubo, Nobuhiko; Tsunooka, Yosuke; Fujie, Fumihiro; Ohara, Junji; Onda, Shoichi; Yamada, Hisashi; Shimizu, Mitsuaki; Harada, Shunta; Tagawa, Miho; Ujihara, Toru

doi:10.7567/1347-4065/ab0acf

Cited by 16 publications

(13 citation statements)

References 27 publications

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“…Figure shows Raman peak shift images taken at the same position as before and Figure shows X‐ray topography images of the same position under six different g vectors. As reported in previous study, the direction of the extra half‐plane of an edge component can be determined from the Raman peak shift to the larger side. As reported in previous study, the direction of the extra half‐plane of an edge component can be determined from the dark contrast that appears when the direction of the extra half‐plane faces the direction of the g vector.…”

Section: Resultsmentioning

confidence: 78%

“…Several types of pale core‐like contrast can be identified. To confirm that these patterns depend on the direction of the Burgers vector of the dislocations, we compared the retardation image with images obtained by the Raman peak shift method and X‐ray topography, which have been reported as methods of determining the direction of the edge component of dislocations . Figure shows Raman peak shift images taken at the same position as before and Figure shows X‐ray topography images of the same position under six different g vectors.…”

Section: Resultsmentioning

confidence: 91%

“…There has also been progress in the methods of observing dislocations in GaN. In addition to the conventional etch pit method, X‐ray topography, and cathodoluminescence (CL) observation, multiphoton photoluminescence (PL) microscopy, which can be used to observe dislocations in 3D, and Raman mapping observation, which can be used to determine the edge component of threading dislocations on the c ‐plane, are actively being carried out . However, these methods are not widely used for observation because they are destructive or require multiple processes (e.g., exposure, development, evacuation, and scanning) and are time‐consuming.…”

Section: Introductionmentioning

confidence: 99%

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Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

Tanaka

Inotsume

Harada

et al. 2019

Physica Status Solidi (b)

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Herein, a newly developed birefringence microscope is used to observe dislocations in gallium nitride (GaN) substrates. The comparison results of the observation method using this microscope with other observation methods, such as X‐ray topography and Raman microscopy, confirms that dislocations in a GaN substrate can be detected with a birefringence microscope. In addition, the observation can be carried out as easily as with an optical microscope. It is also found that under certain observation conditions, the direction of the edge component of dislocations can be determined.

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Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

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Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

Tanaka

Inotsume

Harada

et al. 2019

Physica Status Solidi (b)

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“…Therefore, in this study, peak shift mapping by Raman spectroscopy was used as an alternative evaluation method. Our research group succeeded in identifying the edge component of the strain field caused by TEDs and TMDs using Raman spectroscopy . The direction of b in the c ‐plane of GaN can then be determined via an analysis of the strain field of the edge component; because of the compressive and tensile strains that can increase the positives and negatives of the peak shifts in Raman spectroscopy.…”

Section: Introductionmentioning

confidence: 99%

“…Methods for evaluating TDs in GaN include potassium hydroxide (KOH) etching, transmission electron microscope (TEM), X‐ray topography (XRT), peak shift mapping using Raman spectroscopy, photoluminescence (PL) imaging, cathodoluminescence (CL) mapping, scanning electron microscope (SEM), and multiphoton photoluminescence (MPPL) . Any one of these methods can be used, depending on its advantages and disadvantages for a given research problem.…”

Section: Introductionmentioning

confidence: 99%

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

Inotsume

Kokubo

Yamada

et al. 2020

Physica Status Solidi (b)

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Threading dislocations (TDs) in the GaN substrate and homoepitaxial layer are nondestructively evaluated using X‐ray topography (XRT), Raman spectroscopy, and multiphoton photoluminescence (MPPL) imaging. When the XRT and Raman mapping images are compared, TDs in the GaN substrate are identified as threading edge dislocations (TEDs), threading mixed dislocations (TMDs), and threading screw dislocations (TSDs). TDs are observed to propagate from the GaN substrate to the epitaxial layer. From MPPL imaging, the TEDs are found to be inclined in the [1true1¯00] direction, which is at 90° from the Burgers vector. The TMD studied in detail is found to be inclined in the [true1¯2true1¯0] direction, which is parallel to the Burgers vector. The feasibility of identifying TDs via analysis of the inclined direction of the dislocations in the GaN epitaxial layer is suggested.

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Development of High-Resolution Nuclear Emulsion Plates for Synchrotron X-Ray Topography Observation of Large-Size Semiconductor Wafers

Harada

Nishigaki

Kitagawa

et al. 2023

J. Electron. Mater.

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Characterization of defects in semiconductor wafers is essential for the development and improvement of semiconductor devices, especially power devices. X-ray topography (XRT) using synchrotron radiation is a powerful methods used for defect characterization. To achieve detailed characterization of large-size semiconductor wafers by synchrotron XRT, we have developed nuclear emulsion plates reaching a high-resolution and wide dynamic range. We have shown that higher-resolution XRT images could be obtained using emulsions with smaller iodobromide crystals, and demonstrated clear observation of threading edge dislocations in a SiC epitaxial layer having small contrast. Furthermore, we demonstrated XRT image acquisition for almost all of a 150-mm SiC wafer with one plate. Our development will contribute to advances in electronic materials, especially in the field of power electronics, in which defect characterization is important for improving the performance and yield of devices.

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Nondestructive visualization of threading dislocations in GaN by micro raman mapping

Cited by 16 publications

References 27 publications

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

Development of High-Resolution Nuclear Emulsion Plates for Synchrotron X-Ray Topography Observation of Large-Size Semiconductor Wafers

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