“…Fe-doped InSb ferromagnetism originates from p-type carriers and shows electron-induced ferromagnetism, which is an n-type diluted semiconductor, making it easy to be used in real spin devices [37][38][39][40]. The n-type InSb (In, Fe) Sb ferromagnetic diluted magnetic semiconductor shows significance for next-generation nanoelectronic device [41] applications such as spintronics [42], biosensors to detect bacteria [43], Hall sensors [44], photonics [45], optoelectronics [46], infrared emitters [46,47], gas sensors [48], magneto resistors [49][50], and speed-sensitive sensors [51]. To use and apply the devices mentioned previously, it is necessary to understand the ferromagnetism properties of Fe-doped InSb.…”