Nonequilibrium optical phonon effect on high-field electron transport in InN

Reklaitis, A.

doi:10.1063/1.4764058

Cited by 5 publications

(6 citation statements)

References 23 publications

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“…Here, the highest peak-mobility 4.68 × 10 5 m 2 /kV -s, is obtained in InN material, at 60 kV/m electric field, Fig. 3 , beyond which there is a noticeable difference between our simulated-drift-velocity and that reported by Antanas Reklaitis 34 . Our reported drift-velocity values are higher and the difference is due to selection of different type of scattering phenomena—acoustic, intervalley, optical (Polar), piezoelectric, ionized impurity, Coulomb and surface roughness-as well as due to selection of the optimum band parameter-values i.e.…”

Section: Resultssupporting

confidence: 40%

“…The accuracy of the mobility model proposed in this paper has been verified against both the theoretical and experimental results reported in the literature. The model verification for n-type GaN 1 , AlN 33 and InN 34 is performed at various strengths of applied electric field, Fig. 3 .…”

Section: Resultsmentioning

confidence: 99%

“…

Figure 3 The Comparison of simulated electron drift velocity as a function of applied electric field with the reported literature. Data from present work is displayed as solid lines where as experimental/theoretical results are depicted by open circles, squares and triangles for AlN 33 , GaN 1 and InN 34 respectively. …”

Section: Resultsmentioning

confidence: 99%

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An innovative technique for electronic transport model of group-III nitrides

Srivastava

Saxena

Saxena³

et al. 2020

Sci Rep

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An optimized empirical pseudopotential method (EPM) in conjunction with virtual crystal approximation (VCA) and the compositional disorder effect is used for simulation to extract the electronic material parameters of wurtzite nitride alloys to ensure excellent agreement with the experiments. The proposed direct bandgap results of group-III nitride alloys are also compared with the different density functional theories (DFT) based theoretical results. The model developed in current work, significantly improves the accuracy of calculated band gaps as compared to the ab-initio method based results. The physics of carrier transport in binary and ternary nitride materials is investigated with the help of in-house developed Monte Carlo algorithms for solution of Boltzmann transport equation (BTE) including nonlinear scattering mechanisms. Carrier–carrier scattering mechanisms defined through Coulomb-, piezoelectric-, ionized impurity-, surface roughness-scattering with acoustic and intervalley scatterings, all have been given due consideration in present model. The direct and indirect energy bandgap results have been calibrated with the experimental data and use of symmetric and asymmetric form factors associated with respective materials. The electron mobility results of each binary nitride material have been compared and contrasted with experimental results under appropriate conditions and good agreement has been found between simulated and experimental results.

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Section: Resultssupporting

confidence: 40%

Section: Resultsmentioning

confidence: 99%

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An innovative technique for electronic transport model of group-III nitrides

Srivastava

Saxena

Saxena³

et al. 2020

Sci Rep

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“…For that reason, as mentioned earlier, fields above 50 kV/cm have not been used in this work. However, several estimates of the velocity from these semi-classical simulations are also plotted in figure 8 for comparison to the present velocity values [46,47,50,51,52]. The experimental data from [49] is also shown.…”

Section: The Monte Carlo Approachmentioning

confidence: 83%

Using ensemble Monte Carlo methods to evaluate non-equilibrium Green’s functions

Ferry

2023

Semicond. Sci. Technol.

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The use of ensemble Monte Carlo (EMC) methods for the simulation of transport in semiconductor devices has become extensive over the past few decades. This method allows for simulation utilizing particles while addressing the full physics within the device, leaving the computational difficulties to the computer. More recently, the study of quantum mechanical effects within the devices, effects which also strongly affect the carrier transport itself, have become important. While particles have continued to be useful in quantum simulations using Wigner functions, interest in analytical solutions based upon the non-equilibrium Green's functions (NEGF) have become of greater interest in device simulation. While NEGF has been adopted by many commercial semiconductor, there remains considerable computational difficulty in this approach. Here, a particle approach to NEGF is discussed, and preliminary results presented illustrating the computational efficiency that remains with the use of particles. This approach adopts the natural basis functions for use in a high electric field and the preliminary results are obtained for quantum transport in Si at 300 K. This approach appears to offer significant advantages for the use of NEGF.

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“…The HP effect is a consequence of the power transfer from the external electric field to the lattice via phonon emission by accelerated carriers [32] and the fact that the phonon relaxation time is not zero, which yields to the appearance of a nonequilibrium phonon population. The increase of available phonons augments the scattering probability, and this ultimately affects the high field electronic transport properties [33]. Consequently, it must be regarded as a universal phenomenon, whose relevance depends on the phonon relaxation properties and the dominant scattering modes for each material type or sample.…”

Section: Introductionmentioning

confidence: 99%

Impact of the hot phonon effect on electronic transport in monolayer silicene

Hamham¹,

Iglesias²,

Pascual³

et al. 2018

J. Phys. D: Appl. Phys.

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The hot phonon effect is a non-equilibrium phenomenon that has an important role in highfield electronic transport in two-dimensional electron gases and in 2D materials like graphene. In this work, the influence of this effect on the electronic transport properties of silicene is investigated by means on an ensemble Monte Carlo simulator that accounts self-consistently for the out-of-equilibrium phonon population and the scattering events under high electric field conditions. In this way, the observed reduction in the carrier drift velocity is analyzed in terms of the microscopic scattering events, wavevector distributions, net phonon emission and phonon temperatures. A comparison with the case of graphene is also carried out, showing that despite the similarities concerning the linear bandstructure near the Dirac points, the hot phonon effect is less dominant in silicene due to the differences in the phonon branches and electron-phonon couplings. Even so, neglecting the role of an out-of-equilibrium phonon population may overestimate the high-field drift velocity in silicene up to 25% at moderate carrier concentrations.

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Nonequilibrium optical phonon effect on high-field electron transport in InN

Abstract: Enhancement of electron-longitudinal optical phonon coupling in highly strained InGaN/GaN quantum well structures

Cited by 5 publications

References 23 publications

An innovative technique for electronic transport model of group-III nitrides

An innovative technique for electronic transport model of group-III nitrides

Using ensemble Monte Carlo methods to evaluate non-equilibrium Green’s functions

Impact of the hot phonon effect on electronic transport in monolayer silicene

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