Nongalvanic thermometry for ultracold two-dimensional electron domains

Gasparinetti, Simone; Pérez, M.J.; Franceschi, S. De; Pekola, Jukka P.; Giazotto, Francesco

doi:10.1063/1.4729388

Cited by 17 publications

(23 citation statements)

References 33 publications

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“…The distribution function is conveniently measured when the dot tunneling is fast compared to the data acquisition rate, avoiding complications due to real time detection of single electron tunneling. The current through the charge sensor still gives rise to phonon or photon emission [41] and generally causes heating, analogous to a current flowing directly through the dot as discussed above. However, the sensor and its reservoirs can be electrically isolated and spatially separated somewhat from the dot, reducing heat leaks and coupling strength [42] and improving the situation compared to a direct current through the quantum dot.…”

Section: Quantum Dot Thermometrymentioning

confidence: 99%

GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing

et al. 2014

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We present measurements of the electron temperature using gate-defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a broad range of temperatures down to 10 mK. Upon cooling nuclear demagnetization stages integrated into the sample wires below 1 mK, the device electron temperature saturates, remaining close to 10 mK. The extreme sensitivity of the thermometer to its environment as well as electronic noise complicates temperature measurements but could potentially provide further insight into the device characteristics. We discuss thermal coupling mechanisms, address possible reasons for the temperature saturation and delineate the prospects of further reducing the device electron temperature.

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Section: Quantum Dot Thermometrymentioning

confidence: 99%

GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing

et al. 2014

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“…For example, the quantum corrections of resistivity and Shubnikov-de Haas oscillations, which have been used as an electron thermometer, can be affected by the other layer in a complicated way. More local temperature probes based on, e.g., quantum point contacts and quantum dots have also been investigated [26][27][28]. Noise thermometry provides an attractive way of probing the electron temperature.…”

Section: Possible Experimental Realizationsmentioning

confidence: 99%

Interlayer heat transfer in bilayer carrier systems

Prunnila¹,

Laakso²

2013

New J. Phys.

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We study theoretically how energy and heat are transferred between the two-dimensional layers of bilayer carrier systems due to the near-field interlayer carrier interaction. We derive the general expressions for interlayer heat transfer and thermal conductance. Approximation formulae and detailed calculations for semiconductor-and graphene-based bilayers are presented. Our calculations for GaAs, Si and graphene bilayers show that the interlayer heat transfer can exceed the electron-phonon heat transfer below the (systemdependent) finite crossover temperature. We show that disorder strongly enhances the interlayer heat transport and pushes the threshold toward higher temperatures.

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“…This structure has been employed previously to study the full counting statistics of single electron transport in quantum dots both theoretically [65][66][67][68][69][70][71][72][73][74] and experimentally [75][76][77][78][79][80][81], where the QPC acts as a charge detector that monitors the occupation of the dot. This setup was also experimentally demonstrated [48,50,82,83] to behave as a thermometer, enabled by the fact that the population of the dot is sensitive to the temperature in the base reservoir.…”

Section: Introductionmentioning

confidence: 99%

Thermal transistor and thermometer based on Coulomb-coupled conductors

et al. 2019

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We study a three-terminal setup consisting of a single-level quantum dot capacitively coupled to a quantum point contact. The point contact connects to a source and drain reservoirs while the quantum dot is coupled to a single base reservoir. This setup has been used to implement a noninvasive, nanoscale thermometer for the bath reservoir by detecting the current in the quantum point contact. Here, we demonstrate that the device can also be operated as a thermal transistor where the average (charge and heat) current through the quantum point contact is controlled via the temperature of the base reservoir. We characterize the performances of this device both as a transistor and a thermometer, and derive the operating condition maximizing their respective sensitivities. The present analysis is useful for the control of charge and heat flow and high precision thermometry at the nanoscale. arXiv:1903.11167v1 [cond-mat.mes-hall]

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Nongalvanic thermometry for ultracold two-dimensional electron domains

Abstract: Carbon nanotube quantum dots fabricated on a GaAs ∕ AlGaAs two-dimensional electron gas substrate J. Appl. Phys. 98, 076106 (2005); 10.1063/1.2077841Resonant detection of microwave radiation in a circular two-dimensional electron system with quantum point contacts Appl. Phys. Lett.

Cited by 17 publications

References 33 publications

GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing

GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing

Interlayer heat transfer in bilayer carrier systems

Thermal transistor and thermometer based on Coulomb-coupled conductors

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