Nonideal Factors of Ion-Sensitive Field-Effect Transistors with Lead Titanate Gate

Jan, Shiun-Sheng; Chen, Ying–Chung; Chou, Jung-Chuan; Cheng, Chien‐Chuan; Lu, Chunte A.

doi:10.1143/jjap.41.6297

Cited by 9 publications

(3 citation statements)

References 2 publications

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“…The pH response operated at a well-chosen drain-source current will be readily obtained by the read-out circuit [15], which is a practical and simple method. As shown in Fig.…”

Section: Discussionmentioning

confidence: 99%

“…Generally, a series of ceramic lead titanate materials exhibits chemical stability, mechanical strength, high resistivity, high permittivity and greater ease of manufacture advantages [13]. Earlier we developed an ISFET with a lead titanate (PbTiO 3 ) membrane and obtained excellent performance [14][15][16]. We found that many negatively charged defects exist within the amorphous PbTiO 3 membrane.…”

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

Preparation and properties of hydrogen ion-sensitive field effect transistors with sol–gel-derived Mg-modified lead titanate gate

Jan¹,

Chen²,

Chou³

et al. 2003

Journal of Non-Crystalline Solids

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“…The pH response operated at a well-chosen drain-source current will be readily obtained by the read-out circuit [15], which is a practical and simple method. As shown in Fig.…”

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Preparation and properties of hydrogen ion-sensitive field effect transistors with sol–gel-derived Mg-modified lead titanate gate

Jan¹,

Chen²,

Chou³

et al. 2003

Journal of Non-Crystalline Solids

Self Cite

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“…The drift coefficient was calculated by linear fitting of all output voltages obtained for the time period from 5 to 12 h. To investigate the hysteresis effect of HfO 2 -based dielectrics, the measurements in various pH buffer solutions were performed in the following sequence of steps: pH 7-4-7-10-7. 10 The immersion time of each pH solution was 5 min, and the C-V measurements were performed at 0.5, 1.5, 2.5, and 3.5 min. Each C-V measurement took around 40 s. To study the drift and hysteresis behavior of the HfO 2 -EIS structure, the crystallization and composition of HfO 2 layers with RTA treatment at various temperatures were analyzed by XRD and XPS, respectively.…”

Section: Controlling Program For Characterizations On Eis Structure-mentioning

confidence: 99%

Drift and Hysteresis Effects Improved by RTA Treatment on Hafnium Oxide in pH-Sensitive Applications

Yang

Lai

et al. 2008

J. Electrochem. Soc.

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Rapid thermal annealing ͑RTA͒ treatment in N 2 ambient is applied to optimize the drift and hysteresis effects of HfO 2 -based sensing membrane. The drift coefficient of the 8 nm thick HfO 2 -electrolyte-insulator-semiconductor ͑EIS͒ structure was 1.4 mV/h. After being treated with RTA at 900°C, the drift coefficient and hysteresis width of the 8 nm thick HfO 2 layer was reduced to 0.65 mV/h and 1.7 mV, respectively. For the HfO 2 -EIS structure treated with RTA at 500°C, the drift coefficient was increased to 3.25 mV/h because of the crystallization of the HfO 2 layer and was improved by 900°C annealing due to the densification of the HfO 2 layer. Therefore, the drift coefficient of the HfO 2 -EIS structure was reduced to 0.65 mV/h by RTA treatment at 900°C. With excellent pH sensitivity and stability, an HfO 2 layer with proper RTA processing can be used as pH sensing material in ion-sensitive field-effect transistor-type sensors. Moreover, to easily control capacitance-voltage measurements and automatically calculate parameters such as pH sensitivity, drift coefficient, and hysteresis width of an HfO 2 -EIS structure, a program based on LabVIEW was developed.

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A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

Sinha

Pal

2021

Electrochemical Science Adv

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The demand for miniaturized point‐of‐care chemical/biochemical sensors has driven the development of field‐effect transistors (FETs) based pH sensors over the last 50 years. This paper aims to review the fabrication technologies, device structures, sensing film materials, and modeling techniques utilized for FET‐based pH sensors. We present the governing principles of potentiometric sensors, with major focus on the working principles of ion‐sensitive FETs (ISFETs). We extensively review different sensing film materials deposited by various techniques, which is critical to the sensing performance of ISFETs. The popular fabrication technologies have been presented, with special emphasis on state‐of‐the‐art silicon‐on‐insulator based technology, which can achieve high sensitivity by utilizing the dual‐gate effect. Furthermore, recent advancements in nano‐ISFETs has been elucidated. We also discuss the adoption of unmodified complementary metal‐oxide semiconductor (CMOS) ISFETs using standard CMOS processes, which has enabled the fabrication of integrated ISFET arrays, which are especially suited for ion‐imaging applications. Moreover, recent developments in extended‐gate FETs has been discussed, which have gained lot of attention due to their design flexibility and ease of fabrication, which is desirable for wearable sensing applications. In addition, recently there have been efforts to utilize nonsilicon channel materials for pH‐sensing application to obtain superior performance and various channel materials have been reviewed. Finally, we have extensively reviewed the ISFET device modeling and simulation techniques using various computer‐aided design tools, which aid in sensor design and characterization.

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Nonideal Factors of Ion-Sensitive Field-Effect Transistors with Lead Titanate Gate

Cited by 9 publications

References 2 publications

Preparation and properties of hydrogen ion-sensitive field effect transistors with sol–gel-derived Mg-modified lead titanate gate

Preparation and properties of hydrogen ion-sensitive field effect transistors with sol–gel-derived Mg-modified lead titanate gate

Drift and Hysteresis Effects Improved by RTA Treatment on Hafnium Oxide in pH-Sensitive Applications

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

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