Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices

Abstract

Abstruct-The electrical characteristics of modern VLSI and ULSI device structures may be significantly altered by self-heating effects. The device modeling of such structures demands the simultaneous simulation of both the electrical and the thermal device behavior and their mutual interaction. Although, at present, a large number of multi-dimensional device simulators are available, most of them are based on physical models which do not properly allow for heat transport and other nonisothermal effects.In this paper, we demonstrate that the numerical process/device simulator TRENDY provides a solid base for nonisothermal device simulation, as a physically rigorous device model of carrier and heat transport has been incorporated in the TRENDY program. With respect to the boundary conditions, it is shown that inclusion of an artificial boundary material relaxes some fundamental physical inconsistencies resulting from the assumption of ideal ohmic contact boundaries.The program TRENDY has been used for studying several nonisothermal problems in microelectronics. As an example, we consider an ultra-thin SO1 MOSFET showing that the negative slopes in the V d s -l d s characteristics are caused by the temperature-dependence of the electron saturation velocity.

Generalized Scharfetter–Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient

“…In simulation practice, this term is often neglected, since estimations show that it is negligible in comparison with the other self-heating sources, see Refs. [75,76].…”

Thermodynamic Processes of Perovskite Photovoltaic Devices: Mechanisms, Simulation, and Manipulation

“…First, we develop a rigorous OET model based on the finiteelement method to address and quantify the multi-physics behaviors by coupling the optical, electrical, and thermal modules, [21,22] where the simulation details are provided in the Supporting Information and the related parameters used for this simulation are listed in Tables S1-S3 (Supporting Information). The microscopic energy conversion processes of photons, charge-carriers, and phonons of a PV cell are illustrated in Figure 1, which can be divided into six categories from the viewpoint of recombination sources: I) thermalization heat arising from the energy relaxation, i.e., photon-excited electrons (holes) with excess potential energy beyond bandgap (i.e., hν−E g , where ν is the frequency of incident light) return to the conduction (valence) band edge in picosecond timescales; [23] II) Joule heat caused by the motion of carriers under built-in electric-field within the depletion region; [24] III) bulk recombination heat contributing from Shockley-Read-Hall (SRH) and Auger recombinations; it is worth noting that although the radiation recombination is very important for V OC , it is not a source of heat generation, thus we do not discuss the radiation recombination when describing bulk recombination, and the Auger recombination is almost negligible compared with SRH recombination (Figure S1, Supporting Information). IV) surface recombination heat attributed to the carrier trapping effect by surface defects; V) Peltier heat at heterojunction interface due to the energy band offset; and VI) Peltier heat at the semiconductor/metal interface, where the transport carriers have to flow from conduction/valence band of semiconductor region to the quasi-Fermi level before being collected by the respective electrodes.…”

Influence of the Metal–Semiconductor Interface Model on Power Conservation Principle in a Simulation of Bipolar Devices

“…A user can choose from the drift-diffusion approach through the hydrodynamic model to the full-band Monte Carlo simulation of charge carrier transport. Within this work, we use the thermodynamic model [2], which is based on Wachutka's work [6,7]. This model is an extension of the drift-diffusion approach with a rigorous treatment of heat transport and electrothermal effects present in semiconductors.…”