“…[12][13][14] More recently, the effect of sub-bandgap light was also investigated 15 but, to our knowledge, there has been no clear explanation for the photosensitivity at 800 nm. In one report, 16 the nonlinear absorption at 696 nm was investigated and the authors related it either to a two-photon absorption (TPA) process or a two-step absorption process, leaning toward the latter. However, in other semiconductors, like gallium arsenide, the peak of TPA is at 70% of the wavelength corresponding to half the bandgap, 17 which is around 800 nm for As 2 S 3 .…”