Nonlinear acoustoelectric effect in a semiconductor superlattice

Abstract

The acoustoelectric effect in a semiconductor superlattice (SL) has been studied for a hypersound in the region ql>>1 (where q is the acoustic wave number and l is the electron mean free path). A nonlinear dependence of the acoustoelectric current jac on the constant electric field E is observed. It is noted that when the electric field is negative the current jac rises, reaches a peak and falls off. On the other hand, when the electric field is positive the current decreases, reaches a minimum and then rises. A similar observation has been noted for an acoustoelectric interaction in a multilayered structure resulting from the analysis of Si/SiO2 structure. The dominant mechanism for such a behaviour is attributed to the periodicity of the energy spectrum along the SL axis.

The Dependence of a Quantum Acoustoelectric Current on Some Qualities in a Cylindrical Quantum Wire with an Infinite Potential GaAs/GaAsAl

“…The QAE exists even if the relaxation time¸of the carrier does not depend on the carrier energy, and the results are similar to those for two-dimensional systems. 14,15) This differs from bulk semiconductors, because in bulk semiconductors, 710) the QAE current vanishes for a constant relaxation time. These results are also different from the results of other authors have superlattice.…”

“…These results are also different from the results of other authors have superlattice. 14,15) So, the dependence of a QAE current on some qualities in a CQWIP GaAs/GaAsAl is newly developed. Fig.…”

“…The present work is different from previous works 710) because: 1) the QAE current is a result of not only the electronexternal acoustic wave interaction but also the electronacoustic phonon scattering in the sample; 2) we use the quantum kinetic equation method; 3) we show that the dependence of QAE current on the Fermi energy ¾ F , the temperature T of system and the characteristic parameters of CQWIP GaAs/GaAsAl is nonlinear; 4) we discussed for the CQWIP GaAs/GaAsAl, which is a one-dimensional system (the CQWIP GaAs/GaAsAl) and these results are compared with those for the bulk semiconductor, 710) superlattice. 14,15) This paper is organized as follows: In Section 2, the QAE current is calculated through the use of the quantum kinetic equation method. In section 3, the QAE current is discussed for specific CQWIP GaAs/GaAsAl.…”

“…These results are different from the results of other authors have obtained in the bulk semiconductor, 710) superlattice. 14,15) The cause of the difference between the bulk semiconductor, 710) superlattice 14,15) and the CQWIP GaAs/ GaAsAl is characteristics of a one-dimensional system, in one-dimensional systems, the energy spectrum of electron is quantized in two dimensions and exists even if the relaxation time¸of the carrier does not depend on the carrier energy.…”

Amplification of Ultrasonic Waves in Bulk GaN and GaAlN/GaN Heterostructures

“…A number of reviews on the subject have been published [14][15][16][17]. More recent work has been reported by Gurevich et al [18], Mensah et al [19], and for a two-dimensional system by Govorov et al [20].…”