Abstract. Optical Second-Harmonic Generation (SHG) has been used to study the technologically very important buried semiconductor-metal and magnetic multilayer interfaces. For the case of GaAs-Au, the SHG intensity is shown to depend on the applied bias and Schottky barrier height, and is strongly affected by the sweepout of the carriers generated by the fs excitation pulses. For the M/Co/M multilayers, with M = Cu or Au, the SHG signals appear to depend strongly on the magnetization and can be shown to be interface specific. PACS: 42.65, 73.30, 75.70 Nonlinear optical techniques like Second-Harmonic Generation (SHG) and Sum-Frequency Generation (SFG) have been proven to be versatile and sensitive surface and interface probes, that derive their surface specificity from the symmetry breaking at interfaces [1,2]. In particular, they are unique for studying buried interfaces, that are practically inaccessible by other than optical techniques. Such interfaces, like semiconductormetal, metal-metal, metal-electrolyte and various other interfaces, are highly relevant from a practical point of view, but also pose many fundamental questions about the interfacial electronic structure and dynamics. In this paper two of such interface problems will be adressed: the electric-field dynamics at a Schottky barrier and the magnetic structure of interfaces between thin films of magnetic and nonmagnetic materials. Though both studies rely on field-induced effects (electrical and magnetic, respectively), the observed signals appear to be quite large and to contain some interesting new results.Paper presented at the 129th WE-Heraeus-Seminar on "Surface Studies by Nonlinear Laser Spectroscopies", Kassel, Germany, May 30 to June 1, 1994
SHG at a metabsemiconductor interfaceThe problem of Schottky barrier formation at a metalsemiconductor interface still attracts a lot of attention, as new developments in material fabrication and structure determination have shown that the precise interface structure plays a crucial role in determining the Schottky barrier height. For electro-optic applications, not only the static electronic structure but even more importantly, the dynamics near these interfaces in extremely relevant, as this will affect the speed of such devices. Recent photoluminescence studies of a Au/GaAs structure have shown unexpected field and laser intensity dependences at quite moderate laser powers (10 mW) that are commonly met in optical semiconducting devices [3,4]. Theoretical models suggest a very rapid drop of the effective barrier height as a result of the spatial separation of the carriers excited by the incident laser puls (carrier sweepout). However, the photoluminescence is only indirectly affected by this interface field, as the signal is coming from a large bulk region. Very recently, Qi et al. [5] showed the power of SHG to probe the band bending region in GaAs. A direct way to probe the (time evolution of the) effective Schottky barrier height would be to measure the field induced SHG with ultra-short excitat...