A theoretical formula of the linewidth caused by the thermal activation in a spin torque oscillator with a perpendicularly magnetized free layer and an in-plane magnetized pinned layer was developed by solving the stochastic Landau-Lifshitz-Gilbert equation in the energy-phase representation. It is shown that the linewidth can be suppressed down to 0.1 MHz by applying a large current (10 mA for typical material parameters). A quality factor larger than 10 4 is predicted in the large current limit, which is two orders of magnitude larger than the recently observed experimental value.The spin torque oscillator (STO) [1-6] is a promising candidate for a future nanocommunication device because of its small size, high emission power, and frequency tunability. Recently, it was found [7,8] that an STO with a perpendicularly magnetized free layer and an in-plane magnetized pinned layer [9-14] can achieve a large emission power of close to 1 µW. Therefore, this type of STO will be the model structure for practical STO applications.Another important quantity characterizing the STO's properties is the linewidth ∆f of the power spectrum. For example, a narrow linewidth is necessary to obtain a high quality factor (Q-factor) Q = f 0 /∆f , where f 0 is the peak frequency of the power spectrum. The physical origin of the linewidth is the nonuniform magnetization dynamics due to thermal activation. Therefore, theoretical evaluation of the linewidth due to thermal activation and of the Q-factor is desirable to clarify the theoretically possible values of these parameters.In the self-oscillation state of an STO, the energy supplied by the spin torque balances the energy dissipation due to damping; therefore, the magnetization steadily precesses almost on a constant energy curve. This situation is very similar to magnetization switching in the thermally activated region, where the magnetization precesses on a constant energy curve many times during switching. Recent studies [15][16][17][18][19][20] have shown that the energy-phase representation of the Landau-LifshitzGilbert (LLG) equation is useful for theoretical investigations of the magnetization switching properties, such as the switching probability, in the thermally activated region. Accordingly, we were motivated to develop a theory of the linewidth of an STO based on the LLG equation in the energy-phase representation.In this letter, the theoretical formula for the linewidth of an STO is derived on the basis of the LLG equation in the energy-phase representation. It is shown that the linewidth can be suppressed to 0.1 MHz by applying a large current (∼ 10 mA). The Q-factor can reach more than 10 4 in this type of STO, which is two orders of magnitude larger than the previously reported value [7]. netization directions of the free and pinned layers are denoted as m and p, respectively. The z-axis is normal to the film-plane, and the x-axis is parallel to p. The external field H appl is applied along the z-axis. The current I flows uniformly along the z-axis, where positive...