2024
DOI: 10.1088/1361-6641/ad5e17
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Nonlinear behaviors in back-gate effects of FDSOI MOSFETs at cryogenic temperatures

Yibo Hu,
Zhipeng Ren,
Yizhe Yin
et al.

Abstract: In this work, we systematically investigate the DC performance of Fully Depleted Silicon-on-insulator (FD-SOI) MOSFETs at both room and cryogenic temperatures as low as 77 K. The influences of back-gate bias on normal and flip-well devices are measured and analyzed. Both types devices display non-linear behaviors when adjusting the back-gate voltage at cryogenic temperatures. Notably, the non-linear effects are more prominent in normal-well devices. The possible reasons are analyzed and verified by TCAD simula… Show more

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