Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

Choi, Ji Sun; Kim, Sungjun

doi:10.3390/coatings10080765

Cited by 18 publications

(8 citation statements)

References 38 publications

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“…For storage class memory and embedded memory applications, the fast switching speed of RRAM is attractive. However, large variability and crosstalk issues are big obstacles to commercialization of RRAM [ 7 , 8 , 9 ]. Among a lot of resistor materials, the metal oxides such as HfO 2 , TaO x , TiO 2 , ZrO, and ZnO attract huge interest due to good resistive switching performance such as endurance, retention, high switching speed, and relatively good variability [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

et al. 2021

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In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias voltage condition. The material and chemical information of the device stack including the interfacial layer of TiON is well confirmed by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analysis. The device exhibits uniform gradual bipolar resistive switching (BRS) with good endurance and self-compliance characteristics. Moreover, complementary resistive switching (CRS) is achieved by applying the compliance current at negative bias and increasing the voltage at positive bias. The synaptic behaviors such as long-term potentiation and long-term depression are emulated by applying consecutive pulse input to the device. The CRS mode has a higher array size in the cross-point array structure than the BRS mode due to more nonlinear I–V characteristics in the CRS mode. However, we reveal that the BRS mode shows a better pattern recognition rate than the CRS mode due to more uniform conductance update.

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Section: Introductionmentioning

confidence: 99%

Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

et al. 2021

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“…Magnetoresistive randomaccess memory (MRAM) also shows resistance change by controlling the magnetization of magnetic material [6]. RRAM has the advantage of being capable of tunable resistive switching, which is applicable to the various application as storage memory [7][8][9][10][11][12][13][14][15][16][17][18][19][20], logicin-memory [21], and neuromorphic computing [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40]. Moreover, RRAM shows lowpower operation, high endurance, good retention, high-density integration, and good complementary metal-oxide-semiconductor (CMOS) compatibility in terms of process and material.…”

Section: Introductionmentioning

confidence: 99%

Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO2-Based RRAM

Ryu

Kim

2021

Metals

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In this work, we investigate the resistive switching behaviors of HfO2-based resistive random-access memory (RRAM) in two different oxidants (H2O and O3) in an atomic layer deposition system. Firstly, the surface characteristics of the Ni/HfO2/Si stack are conducted by atomic force microscopy (AFM). A similar thickness is confirmed by scanning electron microscope (SEM) imaging. The surface roughness of the HfO2 film by O3 (O3 sample) is smoother than in the sample by H2O (H2O sample). Next, we conduct electrical characteristics by current–voltage (I–V) and capacitor–voltage (C–V) curves in an initial process. The forming voltage of the H2O sample is smaller than that of the O3 sample because the H2O sample incorporates a lot of H+ in the film. Additionally, the smaller capacitor value of the H2O sample is obtained due to the higher interface trap in H2O sample. Finally, we compare the resistive switching behaviors of both samples by DC sweep. The H2O sample has more increased endurance, with a smaller on/off ratio than the O3 sample. Both have good non-volatile properties, which is verified by the retention test.

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“…Resistive random-access memory (RRAM) based on various metal oxides has been extensively studied due to its superior non-volatile memory performance, specifically in terms of its high endurance, low-power operation, high speed switching, and good complementary metal-oxide-semiconductor (CMOS) compatibility [1][2][3][4][5][6][7][8][9][10]. Metal oxides, such as TaO x and HfO x , have better reproducibility and variability than other material systems like organic [11] and 2D materials [12].…”

Section: Introductionmentioning

confidence: 99%

Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device

Ryu

Kim

2020

Nanomaterials

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Here, we propose a Pt/HfO2/TaOx/TiN artificial synaptic device that is an excellent candidate for artificial synapses. First, XPS analysis is conducted to provide the dielectric (HfO2/TaOx/TiN) information deposited by DC sputtering and atomic layer deposition (ALD). The self-rectifying resistive switching characteristics are achieved by the asymmetric device stack, which is an advantage of the current suppression in the crossbar array structure. The results show that the programmed data are lost over time and that the decay rate, which is verified from the retention test, can be adjusted by controlling the compliance current (CC). Based on these properties, we emulate bio-synaptic characteristics, such as short-term plasticity (STP), long-term plasticity (LTP), and paired-pulse facilitation (PPF), in the self-rectifying I–V characteristics of the Pt/HfO2/TaOx/TiN bilayer memristor device. The PPF characteristics are mimicked by replacing the bio-stimulation with the interval time of paired pulse inputs. The typical potentiation and depression are also implemented by optimizing the set and reset pulse. Finally, we demonstrate the natural depression by varying the interval time between pulse inputs.

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Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

Cited by 18 publications

References 38 publications

Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO2-Based RRAM

Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device

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