Nonlinear Compact Thermal Model of Power Semiconductor Devices

Górecki, Krzysztof; Zarębski, J.

doi:10.1109/tcapt.2010.2052052

Cited by 56 publications

(38 citation statements)

References 14 publications

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“…The error ∆Tjt of the measurement of the value Tj , connected with the existing time interval t1 between the switch-off of the pulse of the heating power and the moment of measuring the voltage u, depends on cooling conditions of the examined device, characterised by its thermal resistance Rth, the shortest thermal time constant τth1 and the weight coefficient a1 [31,32]. This error can be estimated using the following formula: (5) In turn, in the optical method, the measuring error of the temperature Tj − obtained by a thermo-hunter or an infrared camera − provided by the producer is typically ∆Tj = 2 K. The resolution of such instruments is near 0.1 K. Additionally, the error connected with inaccurate estimation of emissivity ε of the examined surface is:…”

Section: Analysis Of the Error Of The Measurement Methodsmentioning

confidence: 99%

The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs

Górecki

2015

Metrology and Measurement Systems

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In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.

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Section: Analysis Of the Error Of The Measurement Methodsmentioning

confidence: 99%

The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs

Górecki

2015

Metrology and Measurement Systems

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“…In the literature, a trend is to move towards real-time power device junction temperature estimation [2]- [5] based on certain thermal models. Typical models of a single-chip power module are in the form of either Cauer network [6] [7] or Foster network [8] [9], as shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

Chen¹,

Pickert

et al. 2014

IEEE Trans. Device Mater. Relib.

166

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Abstract-This paper presents a novel real-time power device temperature estimation method which monitors the power MOSFET's junction temperature shift arising from thermal aging effects and incorporates the updated electrothermal models of power modules into digital controllers. Currently, the real-time estimator is emerging as an important tool for active control of device junction temperature as well as on-line health monitoring for power electronic systems but its thermal model fails to address the device's ongoing degradation. Because of a mismatch of coefficients of thermal expansion between layers of power devices, repetitive thermal cycling will cause cracks, voids and even delamination within the device components, especially in the solder and thermal grease layers. Consequently, the thermal resistance of power devices will increase, making it possible to use thermal resistance (and junction temperature) as key indicators for condition monitoring and control purposes. In this paper, the predicted device temperature via threshold voltage measurements is compared with the real-time estimated ones and the difference is attributed to the aging of the device. The thermal models in digital controllers are frequently updated to correct the shift caused by thermal aging effects. Experimental results on three power MOSFETs confirm that the proposed methodologies are effective to incorporate the thermal aging effects in the power device temperature estimator with good accuracy. The developed adaptive technologies can be applied to other power devices such as IGBTs and SiC MOSFETs, and have significant economic implications.

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“…One of the essential phenomena influencing properties of semiconductor devices is self-heating [1,2,3,4,5]. It appears with a rise of the device internal temperature T j and it is caused by the exchange of electrical energy dissipated in these devices into heat at not ideal cooling conditions.…”

Section: Introductionmentioning

confidence: 99%

The influence of the selected factors on transient thermal impedance of semiconductor devices

Górecki

Zarębski

2014

2014 Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems (MIXDES)

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In the paper the method of estimating values of parameters of the compact thermal model of semiconductor devices is described. The input data for this method are the measured waveforms of transient thermal impedance of the investigated device. The output data of the method are: the set of parameters describing the waveform of transient thermal impedance. The usefulness of the presented method is shown for the selected power MOS transistors operating at different cooling conditions.

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Nonlinear Compact Thermal Model of Power Semiconductor Devices

Cited by 56 publications

References 14 publications

The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs

The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

The influence of the selected factors on transient thermal impedance of semiconductor devices

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