Nonlinear diffusion in excited Si crystals

Janavičius, A.J.; Norgėla, Žilvinas; Purlys, R.

doi:10.1051/epjap:2004212

Cited by 10 publications

(23 citation statements)

References 7 publications

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“…Using the known concentration of Si atoms 5 × 10 22 cm −3 [13] and (6), we can find the relative concentration of singly charged vacancies N r = 1.35 × 10 −10 . Then using the known equation [10]: [17]. The obtained results show the possibility of introducing boron and phosphorus into silicon using X-rays irradiation at room temperature.…”

Section: Resultsmentioning

confidence: 99%

“…We see that the saturation time t s1 = 200 min may be obtained for the sample with singly charged vacancies of high mobility [9] and saturation time t s2 = 415 min for slower doubly negatively charged vacancies [9]. It was only our assumption made using the same publications presented in [9,10]. We obtained that diffusing vacancies had negative charge at room temperature from the Hall mobility measurements [9].…”

Section: Model Calculations and Discussionmentioning

confidence: 99%

“…The soft X-rays photons are mostly absorbed in the surface region and have sufficient energy [10] for producing photoelectrons and Auger electrons in the inner K, L, M shells of Si. They break chemical bonds at the surface of the Si sample and generate the excited vacancies.…”

Section: Discussionmentioning

confidence: 99%

“…A very long lifetime existence of excited negative vacancies [9] (about 9 h) and their superdiffusion at room temperature [6,9,10] creates the conditions for realizing of the superdiffusivity of impurities in excited Si crystals [11] and possibility of production of new microprocessors and solar cells. Mathematical modeling and investigation of excited vacancy diffusion in Si crystal can be useful for interpretation of experiments and projecting of new devices.…”

Section: Introductionmentioning

confidence: 99%

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Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

et al. 2008

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We considered the reasons of superdiffusivity and measured profiles of boron and phosphorus in crystalline silicon at room temperature. The superdiffusivity or ultrafast diffusion of metastable vacancies at room temperature in Si crystal irradiated by soft X-rays was obtained experimentally. In this work, we presented experimentally obtained diffusion coefficients of singly and doubly negatively charged long-lived excited vacancies. These high concentration charged metastable vacancies (about 10 13 cm −3 ) at room temperature can very fast diffuse changing electrical conductivity and the Hall mobility of carriers. We measured the superdiffusivity of negatively charged vacancies, generated by the Auger effect in the regions of the sample, which were not affected by X-rays. In this paper, we presented the obtained superdiffusion profiles of boron and phosphorus in crystalline silicon measured with secondary-ion mass spectrometer.

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Section: Resultsmentioning

confidence: 99%

Section: Model Calculations and Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

et al. 2008

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“…The main conclusion following from results presented in [11,21,25] is the relation between superdiffusivity of metastable vacancies and lattice relaxation of Si crystals excited by soft X-rays. We obtained that after 3 h irradiation the large relaxation of lattice was achieved.…”

Section: Discussionmentioning

confidence: 97%

Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

et al. 2007

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We applied soft X-rays for investigation of dynamics of the Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states produced in the lattice after ejection of the Auger electrons. The irradiated irregularities and defects of the lattice cause a change of the Bragg reflection maxima. Several resonance phenomena are related to metastable states introduced into Si crystal by soft X-rays irradiation. The resonance of mean square displacements of Si atoms in the lattice and the resonance of the Hall mobility after irradiation are obtained and considered.

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Nonlinear diffusion in a plane surface

JanavičiusA.J.

TurskienėS.

2013

Can. J. Phys.

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Diffusion is the result of Brownian motion and must occur with a finite velocity. The earlier presented nonlinear diffusion equation, with diffusion coefficients that are directly proportional to the concentration of impurities, defines the maximum depth of penetration. For nonlinear diffusion from a constant source, the depth of the impurities’ penetration is directly proportional to the square root of the diffusion time. Profiles of nonlinear solutions differ from classical linear solutions on great distances and are in good fitting with experiment. We increased the accuracy of the approximate analytical solutions for nonlinear diffusion in the plane from a square infinite source with fixed initial impurity concentrations in the corners. The nonlinear diffusion equation for the solution was transformed by introducing similarity variables.

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Nonlinear diffusion in excited Si crystals

Cited by 10 publications

References 7 publications

Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

Nonlinear diffusion in a plane surface

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