We have used numerical modeling to study the dynamic shift of the "instantaneous" laser frequency (sweeping) as a function of the pump current modulation frequency for heterojunction quantum lasers when the lasing frequency is tuned within the gain band. As the model for the active medium, we used a two-band model with identical distribution of levels for the electron and hole subbands, in which we take into account direct transitions between the ground-state subbands. We have established that the variation in the sweep qualitatively corresponds to the behavior of the amplitude detuning characteristics of the laser. Depending on the parameters of the system during emission of pulses, the variation in the laser frequency can be monotonic or nonmonotonic. By selecting the pump current modulation frequency and setting the laser frequency within the gain band, we can realize the cases of maximum or minimum dynamic shift of the lasing frequency.Key words: heterojunction quantum laser, pump current modulation, dynamic shift of laser emission frequency (sweeping).Introduction. Semiconductor lasers are widely used to solve various scientific and practical problems. Using them in fiber optics communications, metrology, information transfer, and high-resolution spectroscopy systems etc. requires obtaining emission with a narrow spectral composition. So currently "dynamic single frequency" (DSF) semiconductor lasers have been developed, with stable operation in a regime generating a single longitudinal mode even with high-frequency direct modulation [1]. It is thought that DSF semiconductor lasers are promising radiation sources for fiber optics communications systems, gas analysis systems, etc. [2,3].It was established earlier (see, for example, [4] and citations given in that paper) that even in a regime generating a single longitudinal mode (single-frequency regime), in semiconductor lasers with pump current modulation, during emission of pulses we observe a variation in the instantaneous laser frequency (called deviation, chirping, dynamic shift, or sweeping in the literature). Physically, this is explained by the interconnected fluctuations in the photon density S (intensity of the laser radiation) and concentration of nonequilibrium charge carriers N. Variation of N leads to a corresponding change in the refractive index n in the active region and consequently a change in the instantaneous frequency of the longitudinal mode of the cavity and the laser radiation.There have been previous studies of some features of laser frequency sweeping for semiconductor lasers during pulse emission. For example, the behavior of the variation in the instantaneous laser frequency for vertical cavity surface-emitting lasers has been examined in [5,6], and for semiconductor lasers with active and passive mode locking in [7]. The effect of a dynamic shift of the laser frequency on the operation of recycling memory systems and highspeed code modulation systems based on injection lasers has been studied in [8,9]. Analysis shows that in pr...