Nonlinear effects in domino dynamics of photoinduced phase transitions

Abstract

Nonlinear effects on photoinduced phase-transition domino dynamics in one-dimensional electron-lattice systems are studied under a condition of the two-site photoexcitation. The system parameters, i.e. the interaction between atoms, the friction constant, and the distance between the two excited sites, for the domino process to emerge are clarified numerically. It is shown that a region of the existence of the domino dynamics increases significantly in comparison with the case of the single-site photoexcitation.

Domino-like thermal phase transition of 2,3-bis(phenylethenyl)-5,6-dicyanopyrazine crystal

“…The cooperative spin lattice interaction induces the phase transition through photo-irradiation at a critical temperature, called the photo-induced domino effect [9,11,12]. Theoretically this effect was explained by a model composed of the localized electrons and lattices.…”

Theory of Photoinduced Phase Transitions: From Semiclassical to Quantum Aspects

“…Studies of the deterministic domino processes have been extended to several cases. The two-site excitation (simultaneously or time-delayed) was studied numerically [13]. Even in the region I a , where a single-site excitation cannot yield the domino effect, the domino movement can appear under an appropriate condition of two-site excitation.…”

Nuclear irradiation-induced superconductivity in the binary semiconductor InAs

“…1) The appearance of the superconducting inclusions can be caused by the generation of metal-enriched regions due to instability of the binary crystals with respect to generation of the antisite defects during irradiation by high-energy particles [16,17]. These defects are formed by the abnormal substitution of the lattice sites by the atoms (i.e., the In atom is situated on the lattice site of the As and vice versa).…”

“…The metal-enriched region may have a high conductivity or be in the superconducting state. It should be noted that the appearance of superconducting properties in the binary semiconductor GaAs with departures from the nominal stoichiometry was explained in [17] by a large concentration of antisite defects.…”