Nonlinear effects in thin-film ferroelectric transmission lines at microwave frequencies

Booth, James C.; Orloff, Nathan D.; Mateu, Jordi

doi:10.1109/isaf.2008.4693758

Cited by 2 publications

(3 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Consequently, lumped element capacitors are often used, an example of which are interdigitated capacitors (IDCs). Distributed effects, which are often overlooked, can compromise results from such devices at high frequencies, where the guided wavelength is comparable to the length of the device [25].Here, we report quantitative measurements of in-plane relative permittivity (ǫ 11 ) for Sr n+1 Ti n O 3n+1 thin films (n = 1, 2, 3) by means of an ultra-wideband approach [26]. To obtain the high-frequency behavior of the RP thin-films and their companion substrate (001) (LaAlO 3 ) 0.3 -(SrAl 0.5 Ta 0.5 O 3 ) 0.7 (LSAT), we exploited coplanar waveguides (CPWs) rather than IDCs, which were used at frequencies below 200 MHz.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Broadband dielectric spectroscopy of Ruddlesden–Popper Srn+1TinO3n+1 (n=1,2,3) thin films

Orloff

Tian

Fennie

et al. 2009

Applied Physics Letters

View full text Add to dashboard Cite

We explore the frequency-dependent relative permittivity of Ruddlesden-Popper series Sr n+1 Ti n O 3n+1 (n = 1, 2, 3) thin films as a function of temperature and dc electric field. Interdigitated capacitors and coplanar waveguides were used to extract the frequency response from 500 Hz to 40 GHz. At room temperature, the in-plane relative permittivities (ǫ 11 ) obtained for Sr n+1 Ti n O 3n+1 (n = 1, 2, 3) were 42±3, 54±3, and 77±2, respectively, and were independent of frequency. At low temperatures, ǫ 11 increases and electric field tunability develops in Sr 4 Ti 3 O 10 . 1The Ruddlesden-Popper (RP) homologous series Sr n+1 Ti n O 3n+1 is a unique set of materials whose dielectric properties have yet to be fully explored and have the potential for far reaching applications much like SrTiO 3 , the n = ∞ member of this series [1]. Series members n = 1, 2, 3 are predicted to have fairly high relative permittivities [2]. Although historically RP materials have been the focus of a variety of theoretical [2,3,4] and experimental [5,6,7,8] research, until the recent growth of single-phase RP thin-films [9,10,11,12,13,14,15,16,17], detailed dielectric measurements of single-phase materials have been challenging [18]. The synthesis of stable, singlephase RP thin films opens new possiblities for applications in multilayer heterostructures and suggests experiments to explore the role of their unique crystal structures in ferroelectricity [19].The Sr n+1 Ti n O 3n+1 RP series is of particular interest, because SrTiO 3 is already commonly used in a number of applications: a substrate for perovskite films, integrated nonlinear compensation devices [20], and to enhance ferroelectricity [21]. When strained, SrTiO 3 can exhibit ferroelectricity even at room temperature and at modest bias fields [22]. This increase in tunability unfortunately signifies a remarkable increase in both the relative permittivity and loss, rendering them less useful for high-frequency applications. The Sr n+1 Ti n O 3n+1 RP series may provide a new class of tunable materials which have decreased loss, yet still retain many of the characteristics that make SrTiO 3 so useful.Typical radio frequency dielectric measurements focus on a single frequency [13] or a small range of frequencies, even though frequency dependence carries important information about disorder and relaxation mechanisms. Resonant techniques, such as evanescent microwave microscopy, yield very accurate measurements of local material properties, but are limited in their ability to extract broadband frequency information [23,24]. Consequently, lumped element capacitors are often used, an example of which are interdigitated capacitors (IDCs). Distributed effects, which are often overlooked, can compromise results from such devices at high frequencies, where the guided wavelength is comparable to the length of the device [25].Here, we report quantitative measurements of in-plane relative permittivity (ǫ 11 ) for Sr n+1 Ti n O 3n+1 thin films (n = 1, 2, 3) by means of an ultra-wide...

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

Broadband dielectric spectroscopy of Ruddlesden–Popper Srn+1TinO3n+1 (n=1,2,3) thin films

Orloff

Tian

Fennie

et al. 2009

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Not only did the insertion losses decrease with the thermal treatment, the loss function trace was totally different. The 'as-received' trace had a distinct transition frequency, above which slower processes could not keep up with the driving field, 18 which is not present in the thermally treated sample. These differences are not artefacts of the measurement; they were observed on several samples using the same calibration procedure.…”

Section: Resultsmentioning

confidence: 99%

Low Frequency Radio Wave Detection of Electrically Active Defects in Dielectrics

Obeng

Okoro

Amoah

et al. 2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In this paper, we discuss the use of low frequency (up to 300 MHz) radio waves (RF) to detect and characterize electrical defects present in the dielectrics of emerging integrated circuit devices. As an illustration, the technique is used to monitor the impact of thermal cycling on the RF signal characteristics (S-parameters, such as S11 and S21) of electrically active defects in three dimensional (3D) interconnects. The observed changes in the electrical characteristics of the interconnects were traced to changes in the chemistry of the isolation dielectric used in the through silicon via (TSV) construction; specifically to the conversion of chemical intermediates such as non-bridging silanol (Si-OH) to bridging siloxane (Si-O-Si). We suggest that these “chemical defects” inherent in the ‘as-manufactured’ products may be responsible for some of the unexplained early reliability failures observed in TSV enabled 3D devices. This low frequency RF technique could be optimized to complement, and in some cases compete favorably with, other thin film metrology techniques, such as ellipsometry and Fourier transform infrared spectroscopy (FTIR), for mass production environments.

show abstract

Nonlinear effects in thin-film ferroelectric transmission lines at microwave frequencies

Cited by 2 publications

References 3 publications

Broadband dielectric spectroscopy of Ruddlesden–Popper Srn+1TinO3n+1 (n=1,2,3) thin films

Broadband dielectric spectroscopy of Ruddlesden–Popper Srn+1TinO3n+1 (n=1,2,3) thin films

Low Frequency Radio Wave Detection of Electrically Active Defects in Dielectrics

Contact Info

Product

Resources

About