Nonlinear electron transport in InAs/AlGaSb three-terminal ballistic junctions

Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping

“…It has a simple nanometer-scale three-junction structure and shows a unique nonlinear voltage transfer curve when ballistic carrier transport takes place in the junction. 4 Devices fabricated using high mobility III-V semiconductor have displayed distinct nonlinear characteristic, [5][6][7] and they have been used to make rectifiers, logic gates, frequency mixers, etc. [8][9][10][11] First demonstration of graphenebased TBJ device was made by Jacobsen et al, 12 which nonlinear operation and its gate control were realized at low temperature.…”