Nonlinear Frenkel and Poole effects

Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission

“…This indicates that Poole-Frenkel Effect is the dominant mechanism of emission of holes from channel to charge trapping layers at low electric fields. 4,5,22 This also explains why large V t shifts are obtained with low program/erase voltages.…”

“…This barrier can be further reduced by the electric field in square-root dependence via the Poole-Frenkel Effect. [3][4][5] In 1938, Frenkel explained the increase of the carriers thermal emission rate in an external electric field by the barrier lowering associated with the Coulomb potential of the carriers: as the applied field increases, the barrier height decreases further, and due to this barrier lowering, the thermal emission rate of charges exponentially increases. 22,24,25 This effect has often been assigned to a donor trap, which is neutral when it contains an electron and is positively charged when the electron is absent so that a Coulombic attraction exists.…”

“…3 At lower electric fields, emission of charges over a reduced potential barrier is possible via Poole-Frenkel Effect (PFE). [3][4][5] Recently, a technology that has been attracting a growing attention is ZnO-based memory devices because they can provide high performance as well as low cost, high environmental stability, and optical transparency. [6][7][8] In parallel, the charge-trapping layer can be engineered to improve the trapping and retention characteristics of the memory, allowing for lower operating voltages and thinner tunnel oxides.…”

Electric-field and temperature dependence of the activation energy associated with gate induced drain leakage

“…The reduction in barrier height is proportional to the square root of the electric field. [15][16][17] Furthermore, it is important to note that E a ¼ 0.4 eV corresponds to the most active D it within the Si band gap. Figures 11 and 12 show E a plotted as a function of V gate 1/2 for V drain ¼ 0.5 V and 1.5 V, displaying a perfect linear correlation.…”