1995
DOI: 10.1103/physrevb.51.16832
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NonlinearI(V) characteristics of Luttinger liquids and gated Hall bars

Abstract: Non-linear current voltage characteristics of a disordered Luttinger liquid are calculated using a perturbative formalism. One finds non-universal power law characteristics of the form I(V ) ∼ V 1/(2g−1) which is valid both in the superfluid phase when I is small and also in the insulator phase when I is large. Mesoscopic voltage fluctuations are also calculated. One finds Var(∆V ) ∼ I 4g−3 . Both the I(V ) characteristic and the voltage fluctuations exhibit universal power law behavior at the superfluid insul… Show more

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Cited by 33 publications
(58 citation statements)
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“…For strong bias, interedge backscattering is suppressed and the conductance across the line junction vanishes. In between the two limits, the inter-mode backscattering is mediated by defects in the line junction and a metal-insulator transition is predicted [12,13]. The transition is characterized by a temperature dependent conductivity that vanishes in the insulating phase and diverges in the metallic state in the limit of zero temperature.…”
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confidence: 99%
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“…For strong bias, interedge backscattering is suppressed and the conductance across the line junction vanishes. In between the two limits, the inter-mode backscattering is mediated by defects in the line junction and a metal-insulator transition is predicted [12,13]. The transition is characterized by a temperature dependent conductivity that vanishes in the insulating phase and diverges in the metallic state in the limit of zero temperature.…”
mentioning
confidence: 99%
“…Although a disorder driven metal-insulator transition in a line junction has been predicted earlier [12,13], the high quality of the MBE-grown barrier and the momentum conservation in the single particle tunneling lead us to discount the likelihood of disorder playing a prominent role. The ballistic property of edge states further minimizes the possible decoherence effects associated with disorder.…”
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“…A line junction (LJ) [1,2,3,4,5,6,7,8,9] separating two edges of fractional quantum Hall (QH) states allows the realization of one-dimensional systems of interacting electrons for which the Luttinger parameter can be tuned [10,11,12]. A LJ is formed by using a gate voltage to create a narrow barrier which divides a fractional QH state such that there are two chiral edges flowing in opposite directions (counter propagating) on the two sides of the barrier [13,14,15,16,17].…”
Section: Introductionmentioning
confidence: 99%
“…Introduction -A quantum Hall line junction (QHLJ) 1,2,3 enables the realization of one-dimensional electron systems with widely tunable properties. A line junction is generated by creating a narrow barrier that divides a two-dimensional electron system on a quantum Hall plateau into separate subsystems as illustrated in Fig.…”
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confidence: 99%