Nonlinear measurement of mid-infrared absorption in AlOx waveguides

Ravaro, M.; Guillotel, E.; Du, M. Le; Manquest, Christophe; Marcadet, X.; Ducci, S.; Berger, V.; Leo, Giuseppe

doi:10.1063/1.2911747

Cited by 13 publications

(14 citation statements)

References 12 publications

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“…We can, therefore, estimate α ω to be around 1 cm −1 . These mid-IR losses are lower than those measured by Ravaro et al in a similar waveguide [20], thanks to the smaller number of AlOx layers in our sample. The low level of losses also confirms that the laser wavelength is beyond any tail of the AlOx absorption peak around 3.3 μm as observed in [20].…”

Section: Experiments and Discussioncontrasting

confidence: 66%

AlGaAs guided-wave second-harmonic generation at 223 μm from a quantum cascade laser

et al. 2014

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We demonstrate the frequency doubling of a quantum cascade laser in a multilayered, partially oxidized GaAs/AlOx waveguide. Using the waveguide width to fulfill the phase-matching condition, the second harmonic is generated in the wavelength range between 2.2 and 2.4 μm, where not many semiconductor sources are commercially available to date. We discuss the impact of a few fabrication and experimental parameters on the conversion efficiency, an essential step toward the improvement and practical implementation of this proof-of-principle semiconductor microsystem.

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Section: Experiments and Discussioncontrasting

confidence: 66%

AlGaAs guided-wave second-harmonic generation at 223 μm from a quantum cascade laser

et al. 2014

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“…Around degeneracy, when the wavelength of the TM 00 pump mode is tuned from 950 to 1060 nm, the TE 00 signal wavelength ranges from 1060 to 2120 nm [22]. Accordingly, we used a set of linearly polarized CW lasers, tunable between 1280 and 1610 nm (Tunics telecom external cavity diode lasers), and around 2120 nm (Nanoplus DFB laser diode), for the Fabry-Perot fringe measurements, and between 950 and 1100 nm (Spectra-Physics Ti:sapphire laser) for the transmission measurements.…”

Section: B Experimental Resultsmentioning

confidence: 99%

Toward an AlGaAs/AlOx near-infrared integrated optical parametric oscillator

et al. 2014

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We report on the observation of self-amplified parametric downconversion in a selectively oxidized AlGaAs cavity that was designed to perform as a guided-wave optical parametric oscillator in the near infrared. To date, two technological factors preclude such oscillation and are thoroughly investigated here: oxidation-induced optical propagation losses and the reflectivity of the waveguide resonator facets. The spectral study of the former has singled out two distinct mechanisms: scattering at the oxide interfaces and absorption by point defects in the oxide neighboring layers. Regarding the latter, dielectric mirrors have been designed and deposited on the ridge waveguide facets, with modal reflectivities of ∼10% at pump wavelength and ∼90% at signal/idler wavelengths. With respect to the case of a mirrorless waveguide, the monolithic cavity enabled a factor-2 enhancement of the conversion efficiency, indicating the close proximity of the oscillation threshold.

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“…The optical parameters of our modeling are the Bragg mode internal losses, whose value α = 35 cm −1 is extracted from the experimental results obtained by a second-harmonic generation measurement [14]; the overlap integral between the Bragg mode and the quantum well Γ = 2.45%, calculated with a commercial eigenmode solver [15]; and the facets modal reflectivity for the Bragg mode R = 0.86, calculated by Finite-Difference Time-Domain (FDTD). The radiative recombination time in the quantum well is set to τ rad = 5 × 10 −17 m 3 ·s −1 , while the Shockley-Read-Hall non-radiative recombination processes is τ SRH = 5 ns [16].…”

Section: Optoelectronic Characterizationmentioning

confidence: 99%

Electrically Injected Twin Photon Emitting Lasers at Room Temperature

et al. 2016

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On-chip generation, manipulation and detection of nonclassical states of light are some of the major issues for quantum information technologies. In this context, the maturity and versatility of semiconductor platforms are important assets towards the realization of ultra-compact devices. In this paper we present our work on the design and study of an electrically injected AlGaAs photon pair source working at room temperature. The device is characterized through its performances as a function of temperature and injected current. Finally we discuss the impact of the device's properties on the generated quantum state. These results are very promising for the demonstration of electrically injected entangled photon sources at room temperature and let us envision the use of III-V semiconductors for a widespread diffusion of quantum communication technologies.

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Nonlinear measurement of mid-infrared absorption in AlOx waveguides

Cited by 13 publications

References 12 publications

AlGaAs guided-wave second-harmonic generation at 223 μm from a quantum cascade laser

AlGaAs guided-wave second-harmonic generation at 223 μm from a quantum cascade laser

Toward an AlGaAs/AlOx near-infrared integrated optical parametric oscillator

Electrically Injected Twin Photon Emitting Lasers at Room Temperature

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