Nonlinear-Optical Phase Control in Dispersion-Engineered Si Photonic Wires

Abstract

The strong dispersion and large third-order nonlinearity in Si photonic wires are intimately linked in the optical physics needed for the optical control of phase. By carefully choosing the waveguide dimensions, both linear and nonlinear optical properties of Si wires can be engineered. In this paper we provide a review of the control of phase using nonlinear-optical effects such as self-phase and cross-phase modulation in dispersion-engineered Si wires. The low threshold powers for phase-changing effects in Si-wires make them potential candidates for functional nonlinear optical devices of just a few millimeters in length.

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

“…However, in a waveguiding system, e.g., in fiber-based ultrafast optics, the dispersion-control toolkit is smaller, and engineering waveguide dispersion becomes critical. In particular, when waveguides are built on a silicon platform with a much higher index contrast than optical fibers, dispersion in a highly nonlinear waveguide [187][188][189][190] often shows strong wavelength dependence, which is not preferable for wideband nonlinear applications. In [187,190], the ZDW in silicon rib and strip waveguides is mapped by scanning waveguide dimensions.…”

Nonlinear silicon nanophotonics for mid-infrared applications

“…It is therefore possible to exploit the extremely large enhancement of the effective third-order nonlinearity γ (Fig. 1b) afforded by high-confinement silicon photonic wire waveguides, being as much as 10 5 times larger than that in conventional silica singlemode fiber [10], in order to facilitate efficient parametric processes. Moreover, waveguide dispersion engineering concepts [6,11,12] have been applied to achieve a total onchip gain bandwidth exceeding 220 nm (Fig.…”

Arbitrary Power Splitting Couplers Based on 3x3 Multimode Interference Structures for All-optical Computing

“…However, due to the limitation of computer resources and memory requirements, it is difficult to apply the 3D-FDTD method to the modelling of large devices on the SOI channel waveguide. Meanwhile, the 3D-BPM was shown to be a quite suitable method that has sufficient accuracy for simulating devices based on SOI channel waveguides [8,9]. Therefore, the design for devices on the SOI platform will now be performed using the 3D-BPM.…”