2019
DOI: 10.1002/lpor.201900052
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Nonlinear Optical Signatures of the Transition from Semiconductor to Semimetal in PtSe2

Abstract: The demand for an ultrabroad optical material with a bandgap tunable from zero to at least 1-2 eV has been one of the driving forces for exploring new 2D materials since the emergence of graphene, transition metal dichalcogenides, and black phosphorus. As an ultra-broadband 2D material with energy bandgap ranging from 0 to 1.2 eV, PtSe 2 shows much better air stability than its analogue, black phosphorous. In this work, the superior nonlinear optical performance and ultrafast dynamics of layered PtSe 2 , and s… Show more

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Cited by 86 publications
(92 citation statements)
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References 65 publications
(97 reference statements)
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“…Since the pre-deposition process and post-selenization process are carried out in relatively mild condition, the PtSe 2 film can be prepared on arbitrary substrates. Besides the conventional Si [33,115,116], Si/SiO 2 [32,33,55,94,112,114,[117][118][119][120][121][122][123][124], and Sapphire substrate [81,125,126], 2D PtSe 2 film has been successfully grown on fused quartz [31,84,125], fluorine-doped tin oxide (FTO) [127,128], gallium nitride (GaN) [129], and polyimide [114]. Figure 8c shows the PtSe 2 on the surface of flexible polyimide [41,114].…”
Section: Thermally Assisted Conversionmentioning
confidence: 99%
“…Since the pre-deposition process and post-selenization process are carried out in relatively mild condition, the PtSe 2 film can be prepared on arbitrary substrates. Besides the conventional Si [33,115,116], Si/SiO 2 [32,33,55,94,112,114,[117][118][119][120][121][122][123][124], and Sapphire substrate [81,125,126], 2D PtSe 2 film has been successfully grown on fused quartz [31,84,125], fluorine-doped tin oxide (FTO) [127,128], gallium nitride (GaN) [129], and polyimide [114]. Figure 8c shows the PtSe 2 on the surface of flexible polyimide [41,114].…”
Section: Thermally Assisted Conversionmentioning
confidence: 99%
“…Yim et al . stellten einen chemischen Sensor für die NO 2 ‐Gasadsorption her, der ultraschnelle Reaktionszeiten und hohe Empfindlichkeiten aufwies: Nach der Selenisierung von 0.5 nm dickem Pt durch thermisch unterstützte Umwandlung, was zu wechselnden Schichtdicken zwischen 3–5 Lagen führt, reagierte der Sensor nach 10 s Kontakt auf einen 100‐sccm‐Fluss von NO 2 /N 2 ‐Mischgas, wobei der Ursprungswiderstand in reinem N 2 ‐Gas bei Raumtemperatur vollständig wiederhergestellt wurde. Die Autoren fanden Reaktions/Ruhe‐Zeiten von 2.0 zu 53.7 s und 7.4 zu 38.7 s bei 0.1 zu 1.0 ppm NO 2 , mit einer Nachweisgrenze unter 100 ppb.…”
Section: Eigenschaften Und Anwendungenunclassified
“…Similar to the puckered structure of black phosphorus (BP), PdSe2 has a puckered pentagonal atomic structure − with one Pd atom bonding to four Se atoms and two adjacent Se covalently bonding with each other [4]. This low-symmetry structure makes PdSe2 possess unique in-plane anisotropic optical and electronic properties, featuring a noncentrosymmetric (pentagonal) structure, in contrast with its cousin PtSe2 [5,6]. Further, the bandgap of PdSe2 is strongly layer-dependent, varying form 0 eV (bulk) to 1.3 eV (monolayer), a property well suited for photonic and optoelectronic applications [4,7].…”
Section: Introductionmentioning
confidence: 99%