van der Waals (vdW) indium selenide (InSe) is receiving attention for its exceptional electron mobility and moderate band gap, enabling various applications. However, the intrinsic n-type behavior of InSe has restricted its use predominantly to n-type devices, constraining its application in complementary integrated microsystems. Here, we show superior ambipolar InSe transistors with vdW bottom contacts, achieving impressive p-type on/off current ratios greater than 10 9 and Schottky barrier heights approaching the ideal Schottky−Mott limit. By introducing a partially gate-coupled architecture, we also demonstrate an ambipolar-to-unipolar transition and reconfigurable complementary multifunctionality, including n-type and p-type transistors as well as negative and positive rectifiers and breakdown diodes. The rectification polarity and ratio are gatetunable from 3.5 × 10 7 down to ∼10 without complex heterostructures, chemical doping, and multigate layouts. The negative and positive breakdowns are reversible, with both the breakdown voltage and switching ratio, which can exceed 10 8 , also being electrically tunable.