Nonlinear Photonic Diode Behavior in Energy-Graded Core–Shell Quantum Well Semiconductor Rod

Abstract

Future technologies require faster data transfer and processing with lower loss. A photonic diode could be an attractive alternative to the present Si-based electronic diode for rapid optical signal processing and communication. Here, we report highly asymmetric photonic diode behavior with low scattering loss, from tapered core-shell quantum well semiconductor rods that were fabricated to have a large gradient in their bandgap energy along their growth direction. Local laser illumination of the core-shell quantum well rods yielded a huge contrast in light output intensities from opposite ends of the rod.

InP–InxGa1−xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range

“…2 (a)) is not due to contributions from different areas of the nanowire that emit at different wavelengths, as it would have been if the QW thickness or composition varied along the nanowire. 11,19 Instead, it suggests that it stems from a cause that is spatially shorter in range and common along the length of the nanowire. The rough inverted InGaAs-InP interface seen in Fig.…”

“…Although nanowire heterostructures combining various materials have been extensively reported, [9][10][11][12][13][14][15][16][17][18][19][20] reports on the use of InP-InGaAs material combination in nanowires have been surprisingly rare. 12, [21][22][23][24][25] In fact, InP-InGaAs nanowire QWs have not been reported despite popularity of their planar counterpart.…”

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

“…Lee et al AIP Advances 6, 045209 (2016) opposite directions with reference to [11][12][13][14][15][16][17][18][19][20] m-sapp . 22 Thus, the layered growth of films purely in the (1-10-3) orientation has resulted in a rough surface and the degradation of crystal quality.…”

“…2,4 In recent studies, the growth of inclined GaN NRs was investigated including metal catalyst initiated inclined GaN NRs on a thick a-GaN film formed on r-sapphire 15,16 and strain induced inclined GaN NRs grown on Si(111). 17 Moreover, self-organized inclined GaN NRs on an AlN nucleation formed on r-sapphire. 18 The well-ordered inclined NRs array could be utilized to anti-reflection and light-trapping applications for the improvement of photovoltaic device efficiency.…”

“…Specifically, the GaN NRs grew in a single inclined direction to the [11][12][13][14][15][16][17][18][19][20] sapp . Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer.…”