Nonlinear Planar Hall Effect

Abstract

An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a π/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of π/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time reversal symmetry breaking, which also exists in a wide class of non-centrosymmetric materials with a large span of magnitude. It provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.

Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb2SiTe4

“…Such dimensionally confined electron gas can exhibit exotic quantum phenomena, for instance the high-mobility transport in metal oxide 4 semiconductor field effect transistors (MOSFETs), [1][2][3] superconductivity and magnetism in LaAlO 3 /SrTiO 3 interface, [4][5][6] quantum spin Hall effect in HgTe/CdTe [7][8][9] and InAs/GaSb interfaces, 10,11 and spin-momentum locking in strong topological insulators. [12][13][14] On the other side, QWSs are also widely used in electronic industry, including in high electron mobility transistors (HEMTs), infrared detectors, diode laser etc. [15][16][17][18][19] The features of the QWSs, including the energy positions, splitting of the sub-bands as well as their dispersions are the key factors that determine the intriguing physical properties and the performance of the devices.…”

Berry Curvature and Topology in Low-Dimensional Crystals

“…In strict analogy with the non-linear Hall effect of time-reversal invariant materials [18, 27, 29-32, 34, 35, 38, 79, 80], we find that this non-linear APHE has a geometric contribution that is directly related to the first moment of the Berry curvature, the so-called Berry curvature dipole [18]. This clearly distinguishes the non-linear response we discuss here with the one recently shown to exist on the surface of 3DTIs [78]. We propose graphene and transition metal dichalcogenides (TMD) monolayers [29,81,82], where transition metal and chalcogen atoms form trigonal 3 Anomalous Planar Hall Effect in Two-Dimensional Trigonal Crystals crystal structures, as possible material platforms that can host both the linear and non-linear APHEs in the presence of Rashba spin-orbit coupling [9].…”

“…Even more importantly, the PHE in Weyl semimetals is a prime physical consequence of the chiral anomaly of Weyl fermions [71][72][73][74][75][76]. The conducting surfaces of three-dimensional topological insulators (3DTI) [2] have also been recently shown to support a PHE [77,78]. In these materials, an external planar magnetic field conspires with the spin-momentum locking of the Dirac cones to produce a strongly directional dependent net transverse current.…”

Nonlinear Hall Effect with Time‐Reversal Symmetry: Theory and Material Realizations

“…[ 132 ] Finally, non‐linear responses using the topological surface states of Bi 2 Te 3 have been demonstrated to occur also in the presence of external planar magnetic fields. [ 133 ]…”