Articles you may be interested inIn situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metalorganic vapor phase epitaxy J. Appl. Phys. 115, 094906 (2014); 10.1063/1.4867640High-quality 1.3 μm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates Appl. Phys. Lett. 99, 072116 (2011); Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence J.Using strain analysis on high resolution electron microscopy images and finite element modeling of InGaN quantum wells ͑QWs͒, it is shown that the In composition changes inside the layers can be accurately determined. The analyzed samples were nominally grown with 15%-17% In composition by molecular beam or metalorganic vapor phase epitaxy. Inside these QWs, the In composition is not homogeneous. Finite element modeling strongly suggests that the measured strain corresponds most probably to InN clusters whose size depends on the growth method.