Nonlinear propagation effects in high harmonic generation in reflection and transmission from gallium arsenide

Xia, Peiyu; Kim, Changsu; Lu, Fang; Kanai, Teruto; Akiyama, Hidefumi; Itatani, Jiro; Ishii, Nobuhisa

doi:10.1364/oe.26.029393

Cited by 73 publications

(35 citation statements)

References 23 publications

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“…Similar weaker features also appear at H7 in the experiment, but not in above-gap harmonics. This difference is likely due to the birefringence properties [46] of bulk ZnO crystals, as discussed in Appendix C. As the harmonics are generated close to the exit plane of the crystal, they are sensitive to changes in the driving laser polarization, which becomes elliptical for crystal orientation angles close to 45 • and 135 • . For other polarization components, all the notable features agree very well between experiment and simulation.…”

Section: Polarization Properties Of Hhgmentioning

confidence: 99%

Crystal symmetry and polarization of high-order harmonics in ZnO

Jiang

Gholam-Mirzaei

Crites

et al. 2019

J. Phys. B: At. Mol. Opt. Phys.

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We carried out a joint theoretical and experimental study of the polarization of high-order harmonics generated from ZnO by intense infrared laser pulses. Experimentally we found that the dependence of parallel and perpendicular polarizations on the crystal orientation for all odd harmonics are nearly identical, but they are quite different from even harmonics which also show little order dependence. A one-dimensional two-band model, combined with a linear coupled excitation model, is shown to be able to explain the observed polarization behavior, including low-order harmonics. We further note that the same odd/even order contrast have been reported in a number of other crystals, despite that the harmonics were perceived to be generated via entirely different mechanisms. We demonstrated that this universality is governed by crystal symmetry, not by specific mechanisms. Thus, polarization measurements of harmonics offers a powerful pure optical method for determining the crystal axes as well as monitoring their ultrafast changes when crystals are undergoing deformation. In addition, the ellipticity of harmonic has been studied. It shows that ellipticity of high-order harmonics from solids can be tuned precisely by changing the bond structure of the sample.

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Section: Polarization Properties Of Hhgmentioning

confidence: 99%

Crystal symmetry and polarization of high-order harmonics in ZnO

Jiang

Gholam-Mirzaei

Crites

et al. 2019

J. Phys. B: At. Mol. Opt. Phys.

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“…We prepared monolayer MoS 2 grown with the CVD method (see "Methods" section). This atomically thin semiconductor is an ideal experimental HSG platform on which to avoid propagation effects 10,11,[22][23][24][25] . Figure 1 shows a schematic diagram of the HSG measurement setup.…”

Section: Resultsmentioning

confidence: 99%

Dynamical symmetry of strongly light-driven electronic system in crystalline solids

et al. 2020

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The Floquet state, which is a periodically and intensely light-driven quantum state in solids, has been attracting attention as a novel state that is coherently controllable on an ultrafast time scale. An important issue has been to demonstrate experimentally novel electronic properties in the Floquet state. One technique is light scattering spectroscopy, which offers an important clue to clarifying the symmetries and energy structures of the states through symmetry analysis of the polarization selection rules. Here, we determine circular and linear polarization selection rules of light scattering in a mid-infrared-driven Floquet system in monolayer MoS 2 and provide a comprehensive understanding in terms of the "dynamical symmetry" of the Floquet state.

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“…Here, parallel-polarized even-order emission is not only found experimentally but also explained by the symmetry of the χ ð2Þ tensor. [29][30][31][32] While lower lying valence bands are generally more difficult to explore with optical spectroscopy methods, even-order harmonic generation based on quantum interference provides a unique framework to experimentally access the strength of the intervalence band dipole coupling. At least two dipole-coupled valence bands have to be involved to enable the indirect excitation pathway that leads to the emission of even-order harmonics.…”

Section: Introductionmentioning

confidence: 99%

Probing Intervalence Band Coupling via High‐Harmonic Generation in Binary Zinc‐Blende Semiconductors

Hagen

Koch

2021

Physica Rapid Research Ltrs

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A systematic microscopic theory is presented for high‐harmonic generation in III–V semiconductors that are excited by strongly detuned high‐intensity electromagnetic pulses. As a mechanism for the appearance of even harmonic orders, the quantum interference of different transition paths is analyzed. For the binary zinc‐blende semiconductors, InAs, InP, and GaAs, the intensity ratio between even‐ and odd‐order harmonic emission depends on the strength of the respective intervalence band dipole coupling. However, the large intervalence band dipole in InP leads to even and odd harmonics of similar intensity, no or only very minor even‐order emission due to quantum interference is predicted for InAs where the fundamental transition is strongly favored over intervalence band transitions.

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Nonlinear propagation effects in high harmonic generation in reflection and transmission from gallium arsenide

Cited by 73 publications

References 23 publications

Crystal symmetry and polarization of high-order harmonics in ZnO

Crystal symmetry and polarization of high-order harmonics in ZnO

Dynamical symmetry of strongly light-driven electronic system in crystalline solids

Probing Intervalence Band Coupling via High‐Harmonic Generation in Binary Zinc‐Blende Semiconductors

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