Nonlinear Resistance versus Length in Single-Walled Carbon Nanotubes

Pablo, Pedro; Gómez-Navarro, Cristina; Colchero, J.; Serena, P. A.; Gomez-Herrero, Julio; Baró, A. M.

doi:10.1103/physrevlett.88.036804

Cited by 94 publications

(77 citation statements)

References 25 publications

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“…10 This theory has been used to explain exponential length dependences of the resistance measured in nanotubes. [26][27][28] SL occurs when the phase-coherence length L becomes longer than the localization length L loc . This is equivalent to when the width of the coherent states, បv F / L , becomes smaller than the energy separation between the localized states.…”

Section: Discussionmentioning

confidence: 99%

Cotunneling and one-dimensional localization in individual disordered single-wall carbon nanotubes: Temperature dependence of the intrinsic resistance

et al. 2006

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We report on the temperature dependence of the intrinsic resistance of long individual disordered single-wall carbon nanotubes. The resistance grows dramatically as the temperature is reduced, and the functional form is consistent with an activated behavior. These results are described by a Coulomb blockade along a series of quantum dots. We occasionally observe a kink in the activated behavior that reflects the change of the activation energy as the temperature range is changed. This is attributed to charge hopping events between nonadjacent quantum dots, which is possible through cotunneling processes.

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Section: Discussionmentioning

confidence: 99%

Cotunneling and one-dimensional localization in individual disordered single-wall carbon nanotubes: Temperature dependence of the intrinsic resistance

et al. 2006

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“…A metallic AFM tip was used to measure the current vs. voltage characteristics (IV) of the nanotubes as a function of the distance between the metallic AFM tip, used as mobile electrode, and a fixed macroscopic gold electrode 21 . Briefly, the experiments were performed as follows: a metallic SWNT was first selected (Fig.…”

Section: Tuning the Conductance Of Single Walled Carbon Nanotubes By mentioning

confidence: 99%

“…at room temperature. In addition, the measured low voltage resistance (LVR) data is theoretically analysed using a combination of density functional methods and Green's functions techniques.A metallic AFM tip was used to measure the current vs. voltage characteristics (IV) of the nanotubes as a function of the distance between the metallic AFM tip, used as mobile electrode, and a fixed macroscopic gold electrode 21 . Briefly, the experiments were performed as follows: a metallic SWNT was first selected (Fig.…”

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confidence: 99%

Tuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime

et al. 2005

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Esta es la versión de autor del artículo publicado en: This is an author produced version of a paper published in: El acceso a la versión del editor puede requerir la suscripción del recurso Access to the published version may require subscription Tuning the conductance of single walled carbon nanotubes by ion irradiation in the Anderson localization regimeC. Gómez-Navarro 1 , P.J. Carbon nanotubes 1,2 are a good realization of one-dimensional crystals where basic science and potential nanodevice applications merge 3 . Defects are known to modify the electrical resistance of carbon nanotubes 4 . They can be present in asgrown carbon nanotubes, but controlling externally their density opens a path towards the tuning of the nanotube electronic characteristics. In this work consecutive Ar + irradiation doses are applied to single-walled nanotubes (SWNTs) producing a uniform density of defects. After each dose, the room temperature resistance versus SWNT-length [R(L)] along the nanotube is measured. Our data show an exponential dependence of R(L) indicating that the system is within the strong Anderson localization regime. Theoretical simulations demonstrate that mainly di-vacancies contribute to the resistance increase induced by irradiation and that just a 0.03% of di-vacancies produces an increase of three orders of magnitude in the resistance of a 400 nm SWNT length.The traditional approximation to reduce the size and enhance the performance of electronic devices may not be applicable in the near future 5 . Electronic circuits based on molecules have created great expectation for their new foresighted properties. For the case of electronic circuits based on carbon nanotubes 6 , the influence of disorder and defects 4,7 is of fundamental relevance in the performance of the device. In particular, the density of defects would determine the transport in nanotubes from a ballistic regime 8,9 to either weak or strong localization regimes. Quantum theory dictates that for a one dimensional conductor of length L 10,11 , with a given density of defects, localization effects emerge when the "phase coherence length" L φ is larger than the localization length L 0 . If L is not too large (for L about 3-10 L 0 ) and the inelastic interaction is weak, the wire resistance is controlled by the phase-coherent electron propagation 12 , falling into the strong localization regime in which the resistance increases exponentially with the length of the wire. This regime has not been observed in single-walled nanotubes in spite of the many evidences for weak localization diffusive regime and quantum interference in multiwalled carbon nanotubes 13 . By changing the density of defects, L 0 can be modified allowing to control the resistance of the one dimensional conductor.Induced defects have been already used to modify different properties of carbon nanotubes. Indeed, electron-beam has been used to create in-situ nanotube junctions 14 and to enhance the mechanical response of nanotubes bundles by creating stable links among the tubes 15...

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“…(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)] and Poisson iterations of [Eqs. (7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20)] for the potential profile and charge distribution. Typically, 3 − 5 Born iterations were performed before updating a potential profile using Eq.…”

Section: Formalismmentioning

confidence: 99%

“…Therefore, * Electronic address: svizhenk@nas.nasa.gov † Electronic address: anant@mail.arc.nasa.gov both small and large diameter nanotubes are promising as interconnects. Experiments on small diameter carbon nanotubes show that the differential conductance decreases with applied bias, for voltages larger than 150 mV [9,10,11]. Reference [9] showed that the conductance decreases with increase in bias was caused by reflection of electrons incident in crossing subbands due to scattering with zone boundary phonons.…”

Section: Introductionmentioning

confidence: 99%

Effect of scattering and contacts on current and electrostatics in carbon nanotubes

2005

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We computationally study the electrostatic potential profile and current carrying capacity of carbon nanotubes as a function of length and diameter. Our study is based on solving the non equilibrium Green's function and Poisson equations self-consistently, including the effect of electronphonon scattering. A transition from ballistic to diffusive regime of electron transport with increase of applied bias is manifested by qualitative changes in potential profiles, differential conductance and electric field in a nanotube. In the low bias ballistic limit, most of the applied voltage drop occurs near the contacts. In addition, the electric field at the tube center increases proportionally with diameter. In contrast, at high biases, most of the applied voltage drops across the nanotube, and the electric field at the tube center decreases with increase in diameter. We find that the differential conductance can increase or decrease with bias as a result of an interplay of nanotube length, diameter and a quality factor of the contacts. From an application view point, we find that the current carrying capacity of nanotubes increases with increase in diameter. Finally, we investigate the role of inner tubes in affecting the current carried by the outermost tube of a multiwalled nanotube.

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Nonlinear Resistance versus Length in Single-Walled Carbon Nanotubes

Cited by 94 publications

References 25 publications

Cotunneling and one-dimensional localization in individual disordered single-wall carbon nanotubes: Temperature dependence of the intrinsic resistance

Cotunneling and one-dimensional localization in individual disordered single-wall carbon nanotubes: Temperature dependence of the intrinsic resistance

Tuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime

Effect of scattering and contacts on current and electrostatics in carbon nanotubes

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