Nonlinear Steady-State III–V FET Model for Microwave Antenna Switch Applications

Takatani, Shinichiro; Chen, Cheng-Duan

doi:10.1109/ted.2011.2169415

Cited by 13 publications

(34 citation statements)

References 17 publications

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“…For FET large signal modeling, current FET models included in the foundry PDKs are often found not so accurate for switch MMIC design, hence FET large‐signal models specially designed for high power switch applications are very important. Several articles covering this topic show good results for applications at microwave low‐frequency bands. Some HEMT intrinsic models were designed to predict harmonics at 0.9 GHz and 2 GHz power drive .…”

Section: Introductionmentioning

confidence: 99%

Direct extraction method of HEMT switch small‐signal model with multiparasitic capacitive current path

Yuan

Yang

et al. 2018

Int J RF Microw Comput Aided Eng

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It has been found that the analytical extraction methods cannot be applied to the usual test structure of the switch high electron-mobility transistor (HEMT) with a large-value gate grounded resistor. The significant effect of the precise multicapacitive current path on switch model precision has also been found. The multicapacitive current path here is different from the seemingly similar hypothesis proposed for the distributed parasitic effects at high frequencies (eg, D-band). In fact, for switch based HEMT, it is important to distinguish between the capacitive current paths accurately even at relatively low frequencies. Due to the existing of the large gate resistance, the usual capacitance mix decreases the accuracy of the switch model significantly. Thus an analytical method has been developed to calculate parasitic capacitances (the capacitance to ground and the interelectrode capacitance) through full-wave electromagnetic analysis. For practical applications and further verification, the whole HEMT switch small-signal models and the direct extraction methods are presented. The simulated results fit well with the measurements up to 40 GHz. K E Y W O R D S electromagnetic analysis, high electron-mobility transistor, interelectrode parasitic capacitance, microwave switches, small-signal model 1 | INTRODUCTION In 1988, Dambrine et al.proposed an analytical way to extract FET small-signal equivalent circuit parameters. 1 All the parasitic parameters were analytically extracted by using cold-FET method. After de-embedding all the parasitic effects from the whole S parameters, the intrinsic parameters were calculated by analytical equations. 2 De-embedding methods, cold-FET techniques, and analytical equations 3 are used by lots of FET small-signal model extraction methods today. Note that Reference 1 also has some limitations, for example, the pinch-off intrinsic model used to determine the parasitic capacitance parameters tends to overestimate the value of the drain to ground capacitance (C pd ). The high positive gate bias condition used to determine the parasitic inductances and resistances have the potential to destroy the gate Schottky diode. 4 In addition, for high electron-mobility transistors (HEMTs), it is difficult to apply enough high gate bias to ignore the gate capacitance effect. 5,6 Many works are making improvements to meet the needs of new semiconductor technologies and new applications like high frequency applications. 7-11 The small-signal modeling is also the basis of the large-signal and noise modeling. [12][13][14] As stated above, lots of articles and effort has been dedicated to common-source FET small-signal modeling, but high-frequency switch FET small-signal modeling is still difficult. Very few works concern switch FET small-signal modeling. [15][16][17][18][19][20][21] Numerical solutions concern intrinsic effects only and are difficult to meet measured behavior. [15][16][17] The simplified equivalent circuits cannot capture full feature of the switch HEMT at high frequencies. 18,19...

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Section: Introductionmentioning

confidence: 99%

Direct extraction method of HEMT switch small‐signal model with multiparasitic capacitive current path

Yuan

Yang

et al. 2018

Int J RF Microw Comput Aided Eng

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“…The single‐gate and dual‐gate switch‐HEMTs share the same intrinsic parameters since they share the same gate process. R ig is the inter‐gate parasitic resistance . R G represents the large gate‐resistor, which was modeled by a simple R‐C parallel network .…”

Section: Complete Parasitic Capacitance Shell Extractionmentioning

confidence: 99%

“…The extracted intrinsic model of the single‐gate HEMT is directly embedded into the parasitic shell of the dual‐gate HEMT. The inter‐gate parasitic‐resistance R ig is fitted with the on‐state channel‐resistance . By modeling several 4‐finger GaAs HEMTs with different gate‐widths ( W g ), linear scalability of the models are found, Figures and illustrate the scalability of the capacitances of single‐gate and dual‐gate model, respectively.…”

Section: Switch Small Signal Model Verificationsmentioning

confidence: 99%

“…However, the distributed model is too complicated, and the scalability of the model is difficult to get. Several papers concerning switch‐HEMT large‐signal modeling not only provide solutions to switch‐HEMT model at microwave low frequencies (L‐band), but also raise some special modeling requirements of the intrinsic model of switch‐HEMT . Since capacitances are almost the only parameters of off‐state switch model, these papers draw much attention to capacitance modeling.…”

Section: Introductionmentioning

confidence: 99%

“…Since capacitances are almost the only parameters of off‐state switch model, these papers draw much attention to capacitance modeling. For example, the effect of charge‐trapping on intrinsic‐capacitance was found very important to harmonic simulations . In Reference , symmetrical large‐signal intrinsic‐capacitance model was studied in detail.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Complete parasitic‐capacitance‐shell extraction of high‐frequency switch‐HEMT equivalent‐circuit model

Yuan

Hu²,

Yang

2020

Int J RF Microw Comput Aided Eng

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This paper presents a new solution to a particular problem of high electron‐mobility transistor (HEMT) equivalent‐circuit modeling, that is, complete parasitic‐capacitance‐shell extraction of high‐frequency single‐gate and dual‐gate switch‐based HEMTs, which is very important to the accuracy of high‐frequency HEMT switch models, but not important in the conventional common‐source HEMT modeling for amplifier‐applications. A full‐wave electromagnetic (EM) analysis based method is proposed to analytically extract the complete parasitic‐capacitance‐shell of single‐gate and dual‐gate switch‐based HEMTs. All the 6 parasitic capacitances of the single‐gate switch‐based HEMT and all the 10 parasitic capacitances of the dual‐gate switch‐based HEMT are extracted by linear equations. No resistance parameter is needed to calculate the capacitance‐to‐ground and the interelectrode‐capacitance, and for the first time, all the 10 parasitic capacitances of the dual‐gate switch‐based HEMT are completely considered and analytically extracted. Then, a consistent and systematic modeling procedure of single‐gate and dual‐gate switch‐based HEMT is verified. With the complete parasitic‐capacitance‐shells extracted, the accurate intrinsic model of the single‐gate HEMT can be directly embedded into the parasitic‐shell of the dual‐gate HEMT. The predicted scattering parameters of the single‐gate and dual‐gate series switches fit well with the measurements up to 40 GHz, and accurate linear scalability are also found.

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A Nonlinear Model of RF Switch Device Based on Common Gate GaAs FETs

Wang,

Kong

2024

Int J Numerical Modelling

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This paper presents a novel method for nonlinear modeling GaAs field‐effect transistors (FETs) in a common gate (CG) configuration, which is crucial for the effective design and thorough assessment of RF switch circuits. By focusing solely on a CG‐based GaAs FET for RF switch device characterization and modeling, the modeling process is streamlined compared to traditional methods that involve both CG and common source (CS) devices. The direct measurement of both DC and RF characteristics using the CG device enhances the accuracy of model parameter extraction. This approach ensures consistency in model and simulation applications as the CG topology aligns with devices commonly found in RF switch circuits. Moreover, to enhance predictive accuracy regarding the dispersion effect, an improved equation of drain‐source current has been incorporated. The empirical validation of the model reveals good agreements in terms of insertion loss, isolation, and output power performance for the CG GaAs FET device, including a wide band single‐pole double‐throw (SPDT) switch Monolithic Microwave Integrated Circuit (MMIC).

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Nonlinear Steady-State III–V FET Model for Microwave Antenna Switch Applications

Cited by 13 publications

References 17 publications

Direct extraction method of HEMT switch small‐signal model with multiparasitic capacitive current path

Direct extraction method of HEMT switch small‐signal model with multiparasitic capacitive current path

Complete parasitic‐capacitance‐shell extraction of high‐frequency switch‐HEMT equivalent‐circuit model

A Nonlinear Model of RF Switch Device Based on Common Gate GaAs FETs

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