Nonlinearity and asymmetry of Raman scattering in crystals

Semjonow, A.Je.

doi:10.1016/0921-4526(92)90573-b

Cited by 3 publications

(8 citation statements)

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“…1. We have an increase of the anti-Stokes intensity (yl < 0 in (5)) and a decrease of the Stokes component (yz > 0 in (5)) and loss at the pump frequency (y3 > 0) with increasing laser intensity (Fig. 3).…”

Section: Comparison Of Theory and Experimentsmentioning

confidence: 85%

“…A theoretical treatment [l to 31 has shown that the effect of ASRS is due to the dynamic interactions of individual polar optical phonons. The effect of ASRS is very sensitive to the physical properties of the crystals (for example, to defect concentrations) [5].…”

Section: Introductionmentioning

confidence: 99%

“…In [6] a new type of ASRS was considered for a multilayered E-GaSe crystal and for Si crystals (111) after UV irradiation where not only the probabilities of light scattering are different for the scattering to the right and to the left directions but also the phonon frequencies and phonon halfwidths in backscattering geometry. In this paper we show that the chaotic behavior of the nonlinear dynamical system (crystal + initial and scattered laser light) can describe and explain the peculiarities of ASRS.…”

Section: Introductionmentioning

confidence: 99%

“…a) to c) Scattering geometries, Raman scattering diagrams (law of momentum conservation), and d), e) Raman spectra of LiNbO, crystals for the "left" (L) and the "right" (R) scattering in the cases of a) bulk transparent crystals, b) opaque crystals (90"-scattering geometry), c) backscattering (p-polarization of incident light) and with the special orientation of the (1 11) surface with a crystal cut along directions (X, Y , Z ) = (X, Y " , Z ) = ([llz], [lTO], [lll]) ( Fig. l b ) [5].…”

Section: Introductionmentioning

confidence: 99%

“…The anti-Stokes-Stokes intensity ratio (ZAsl/Isl) is different for the two lines ("new" and "old") indicating different temperatures. The temperature (7') is derived from the Boltzmann relation [17], = %Ik, In (CIASt/lSt) 9 (6) where oR is the Raman frequency, k, the Boltzmann constant, c a correction factor. Shift and broadening depend on laser power and also on the position of the probe laser spot.…”

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confidence: 99%

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Stochastic Processes and Asymmetry of Raman Scattering at the Surface of Opaque Crystals

Semjonow

Holz

Lau

et al. 1992

Physica Status Solidi (b)

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First experimental results are presented about a new type of asymmetry of the spontaneous Raman scattering (ASRS) in crystals (Si after UV irradiation), where not only the probabilities of light scattering are different for the scattering to the right and to the left directions, but also the phonon frequencies and halfwidths are different. The experimentally observed features of ASRS in crystals are explained theoretically by a chaos model of nonlinear optics (a chaotic Raman attractor). The interactions between Stokes, anti-Stokes, and pump laser waves cause the new type of ASRS in crystals. It is shown that Stokes and anti-Stokes modes may exhibit the redistribution of phonon intensities, different phonon frequencies, and linewidths.Die ersten experimentellen Resultate eines neuen Typs der asymmetrischen spontanen Raman-Streuung (ASRS) in Kristallen (Si nach UV-Bestrahlung) werden dargestellt. Dabei sind nicht nur die Wahrscheinlichkeiten fur die Lichtstreuung fur die Rechts-und die Linksrichtung unterschiedlich, sondern auch die Phononenfrequenzen und die Halbwertsbreiten. Die experimentell beobachteten Besonderheiten der ASRS in Kristallen werden theoretisch mit einem Chaosmodell der nichtlinearen Optik erklart (chaotischer Raman-Attraktor). Die Wechselwirkung zwischen Stokes-, Antistokes-, und Pumplaserwellen wird durch einen neuen Typ der ASRS in Kristallen hervorgerufen. Es wird gezeigt, da13 Stokes-und Antistokesmoden eine Umverteilung der Phononenintensitaten hervorrufen konnen, und auch die Phononenfrequenzen und die dazugehorigen Linienbreiten modifizieren.

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Section: Comparison Of Theory and Experimentsmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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