Nonlocal analysis to study of the impact ionization and avalanche characteristics of deep submicron Si devices

Masudy‐Panah, Saeid

doi:10.1016/j.ssc.2011.02.003

Cited by 8 publications

(3 citation statements)

References 19 publications

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“…Structural developments have led to the fabrication of both Si and AlAsSb avalanche diodes with 100 nm channels 20,21 and smaller dimensions are expected. 22 These results, available in the literature of avalanche diode research, show that our InSb device can be scaled to sizes of 10 to 100 nm.…”

Section: Prospects For Scalingmentioning

confidence: 65%

Magnetic field controlled reconfigurable logic gates with integrated nanomagnets

Johnson

Song

Hong³

et al. 2013

Spintronics VI

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We describe the development of a magnetic logic device that is uniquely different from spintronic approaches based on magnetoresistive effects that derive from spin dependent transport of carriers. The core of our device is a thin film avalanche diode channel fabricated as a p-n bilayer. Because of the structural asymmetry, the carriers are sensitive to an in-plane magnetic field and the diode has a large magnetoresistance. We characterize our device as a current switch. The high-and low-current states are well defined and are determined by the magnetic field. Positive or negative field orientation with constant field strength is an appropriate selector. We then describe an integrated avalanche diode logic device in which the magnetic field is provided by the local fringe field from a patterned ferromagnetic film with nanometer dimensions. The magnetization orientation of the nanomagnet, and the sign of the magnetic field, is set by spin torque transfer (STT) using small amplitude current pulses. We describe how simple arrangements of these integrated devices can be used as dynamically reconfigurable logic gates. Reconfigurable Boolean AND/OR gates using early prototype structures with micron dimensions are shown. Scaling arguments that justify the plausibility of fabricating an integrated device with dimensions of 100 nm are presented. These arguments suggest that such a device could produce an output current driving STT write processes and provide fanout capability in an integrated network.

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Section: Prospects For Scalingmentioning

confidence: 65%

Magnetic field controlled reconfigurable logic gates with integrated nanomagnets

Johnson

Song

Hong³

et al. 2013

Spintronics VI

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“…However, high internal gain mechanism of APDs eliminates the burden of trans-impedance amplifiers in case of the applications where SNR-budget is not a major concern. Moreover, high sensitivity and ultra-high speed of APD are the primary reasons behind the superiority of APDs over other photo-detectors [2][3][4][5][6]. The APD-based optical receivers can achieve high signal-to-noise ratio within smallest noise equivalent power among all state-of-the-art photo detectors [7].…”

Section: Introductionmentioning

confidence: 99%

Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection

Ghosh,

Acharyya,

Biswas

et al. 2024

IEEE Access

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A multiple quantum barrier (MQB) avalanche photodiode (APD) structure based on GaN/AlxGa1-xN material system has been proposed in this paper which is capable of detecting infrared (IR) signal up to 6.0 µm wavelength. A selfconsistent quantum drift-diffusion (SCQDD) model developed by the authors, has been used to determine the current-voltage characteristics under dark and illuminated conditions, spectral response, excess noise properties, signal-to-noise ratio, time and frequency responses. Results show that the proposed MQB APD attains peak responsivity of 60 AW -1 at 3.0 µm wavelength. Incorporation of a dedicated thin n-type GaN layer for avalanche multiplication in between the p + -GaN contact layer and MQB constant-field drift-layer ensures significantly low noise equivalent power under normal operating conditions at room temperature (300 K). Optical pulse response of the device reveals that special restriction over the charge multiplication able to supress the minor peaks of the current response and consequently significantly narrow pulse response can be achieved. Narrow pulse response leads to broad bandwidth of 274.5 GHz, which is significantly broader than the existing IR photo-detectors.INDEX TERMS avalanche photodiodes, multiple quantum barrier, self-consistent quantum drift-diffusion model, infrared, heterojunction, responsivity, pulse response, bandwidth.

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“…Also, it has been shown that in ultra-thin APDs, those carriers that ionize early along their trajectories arrive at the ionization event with enhanced velocities given by [14,15] …”

Section: Introductionmentioning

confidence: 99%

Velocity enhancement in APDs with sub-100-nm multiplication region

Masudy‐Panah

Tikkiwal

2015

Optics Communications

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Nonlocal analysis to study of the impact ionization and avalanche characteristics of deep submicron Si devices

Cited by 8 publications

References 19 publications

Magnetic field controlled reconfigurable logic gates with integrated nanomagnets

Magnetic field controlled reconfigurable logic gates with integrated nanomagnets

Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection

Velocity enhancement in APDs with sub-100-nm multiplication region

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