Nonlocal electron dynamics in GaN / AlGaN transistor heterostructures

Abstract

The processes of nonlocal electron heating in transistor heterostructures based on gallium nitride and gallium arsenide were compared. It has been shown that, in the case of GaAs double doped pseudomorphic heterostructures, the real space transfer of electrons significantly reduces their drift velocity overshot in the region of a strong field as compared with pure bulk GaAs, while in GaN-based heterostructures the decrease in the drift velocity overshot does not exceed 30% in the studied cases. Keywords: Real space transfer, field-effect transistor, gain factor

Electrons drift velocity overshot in heterostructures with double-sided donor-acceptor doping and digital barriers

“…High-power field-effect transistors based on gallium nitride heterostructures have confidently advanced into the millimeter wavelength range in the recent years [1][2][3][4]. However, both theoretical studies [5,6] and analysis of the features of the obtained record results [4] show that it will be difficult to move up the frequency range for devices based on gallium nitride without fundamentally new technical solutions. The situation is exactly opposite for heterostructures based on gallium arsenide: gallium arsenide pseudomorphic heterostructures have great potential to improve parameters, especially in terms of operating frequencies.…”