2022
DOI: 10.1103/physrevlett.128.217202
|View full text |Cite
|
Sign up to set email alerts
|

Nonlocal Interactions in Moiré Hubbard Systems

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
9
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
6
3

Relationship

0
9

Authors

Journals

citations
Cited by 39 publications
(9 citation statements)
references
References 38 publications
0
9
0
Order By: Relevance
“…Our work motivates further studies to confirm the specific spin/ valley symmetry breaking of the odd-integer gaps, as well as transport studies to confirm whether quantum spin Hall insulating states are realized at even integers, including a potential double quantum spin Hall insulator at n ¼ À4 (29). More generally, this work opens a platform for studying tunable topological bands in the limit of larger moiré wavelengths where interacting phases such as fractional Chern insulators may be more readily stabilized (46,47).…”
Section: Discussion and Outlookmentioning
confidence: 96%
“…Our work motivates further studies to confirm the specific spin/ valley symmetry breaking of the odd-integer gaps, as well as transport studies to confirm whether quantum spin Hall insulating states are realized at even integers, including a potential double quantum spin Hall insulator at n ¼ À4 (29). More generally, this work opens a platform for studying tunable topological bands in the limit of larger moiré wavelengths where interacting phases such as fractional Chern insulators may be more readily stabilized (46,47).…”
Section: Discussion and Outlookmentioning
confidence: 96%
“…In experiment, the filling can be adjusted, and Van Hove filling can be reached, by tuning the gate voltage, which we model here by varying the chemical potential μ between 1/4 and 1/2 filling. The interaction parameters U, V n also depend on the twist angle, and on the dielectric environment so that the strength and range of interactions can be controlled 43 . First-principles calculations show that the extended interactions V n are sizable in effective models for hetero-bilayer TMDs 34 .…”
Section: Introductionmentioning
confidence: 99%
“…To date, much theoretical analysis has relied on an effective Hubbard model description of interacting electrons in the lowest few moiré bands [4][5][6][7]. This approach successfully explains and predicts many observed phenomena such as the emergence of Mott insulators at n = 1 [8,9], incompressible Wigner crystals at fractional fillings n < 1 [8,[10][11][12][13][14][15][16][17] and charge transfer between distinct species of moiré atoms at n > 1 [5,[18][19][20][21] (n is the number of doped electrons or holes per moiré unit cell).…”
mentioning
confidence: 99%