1996
DOI: 10.1103/physrevlett.77.4249
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Nonlocal Photorefractive Screening from Hot Electron Velocity Saturation in Semiconductors

Abstract: Intervalley scattering of hot electrons during high-field transport in transverse-field photorefractive quantum wells induces a nonlocal optical response in which photoinduced changes in the refractive index are spatially shifted relative to the optical stimulus, providing an avenue for optical gain. We demonstrate that the onset of the photorefractive phase shift coincides with the onset of velocity saturation. This nonlocal response is the high-resistivity consequence in semi-insulating semiconductors of the… Show more

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Cited by 28 publications
(17 citation statements)
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“…Photorefractive phase shifts were discovered in transverse-field photorefractive quantum wells 15 and have been shown to arise from hot-electron effects and transport nonlinearity. 10,16 In Eq. (8) the modulation amplitude is given by the index m multiplied by a parameter , which expresses the contrast ratio of the field within the device relative to the modulation expressed by Eq.…”
Section: A Associating Photorefractive Gratings With Electroabsorptionmentioning
confidence: 99%
See 1 more Smart Citation
“…Photorefractive phase shifts were discovered in transverse-field photorefractive quantum wells 15 and have been shown to arise from hot-electron effects and transport nonlinearity. 10,16 In Eq. (8) the modulation amplitude is given by the index m multiplied by a parameter , which expresses the contrast ratio of the field within the device relative to the modulation expressed by Eq.…”
Section: A Associating Photorefractive Gratings With Electroabsorptionmentioning
confidence: 99%
“…The two-wave mixing performance in the quantum wells is complicated by several aspects of the device operation that have not previously been explored in detail. These aspects include the deviation from quadratic dependence of the electroabsorption at high electric fields, the onset of hot-electron effects associated with the Gunn effect in GaAs, 10 and the role of the excitonic spectral phase in achieving quadrature. We provide a complete experimental exploration of these effects and apply the results to predict the noise-equivalent surface displacement (NESD) for laser-based ultrasound detection using photorefractive quantum-well devices.…”
Section: Introductionmentioning
confidence: 99%
“…This phenomenon leading to the decrease of the electron mobility is the reason of Gunn oscillations in doped GaAs crystals. Although, due to low free carriers concentrations, Gunn oscillations do not appear in semi-insulating MQW 6 , the nonlinear transport due to the field dependent mobility of electrons change the photorefractive effect 6,7 .…”
Section: Introductionmentioning
confidence: 97%
“…neglecting a common overall absorption of the beams in the PRQW, where P l 0 and P p 0 are the probe and local oscillator power before the PRQW, ͑t͒ is the phase modulation, and P is the photorefractive phase shift that represents the phase offset between the intensity pattern and the optical index pattern driven by the space-charge formation [15,16]. The excitonic spectral phase ͑͒ is defined by…”
Section: Intensity-free Homodyne Detection Using Photorefractive Quanmentioning
confidence: 99%
“…where T 2 is the excitonic free induction decay (FID) time [16]. Because of the wavelength dependence of ͑͒, the quadrature condition [17] is achieved by selecting the operating frequency q at which ͑͒ ϩ P ϭ 0 or , and the homodyne signals depend linearly on the phase modulation.…”
Section: Intensity-free Homodyne Detection Using Photorefractive Quanmentioning
confidence: 99%