2017
DOI: 10.1002/advs.201700472
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Nonlocal Response in Infrared Detector with Semiconducting Carbon Nanotubes and Graphdiyne

Abstract: Semiconducting single‐walled carbon nanotubes (s‐SWNTs) are regarded as an important candidate for infrared (IR) optical detection due to their excellent intrinsic properties. However, the strong binding energy of excitons in s‐SWNTs seriously impedes the development of s‐SWNTs IR photodetector. This Communication reports an IR photodetector with highly pure s‐SWNTs and γ‐graphdiyne. The heterojunctions between the two materials can efficiently separate the photogenerated excitons. In comparison to device fabr… Show more

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Cited by 30 publications
(27 citation statements)
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“…GDY was reported to be able to promote the dissociation of excitons without influencing the electrical performance of the SWNT film (Figure 74). 376 The IR detector fabricated with SWNTs and GDY exhibited excellent and uniform response. Besides a fast response time below 1 ms of this IR detector being demonstrated, the optimal responsivity of 0.4 mA W −1 and detectivity of ∼5 × 10 6 cm Hz 1/2 W −1 can also be realized.…”
Section: Chemical Reviewsmentioning
confidence: 99%
“…GDY was reported to be able to promote the dissociation of excitons without influencing the electrical performance of the SWNT film (Figure 74). 376 The IR detector fabricated with SWNTs and GDY exhibited excellent and uniform response. Besides a fast response time below 1 ms of this IR detector being demonstrated, the optimal responsivity of 0.4 mA W −1 and detectivity of ∼5 × 10 6 cm Hz 1/2 W −1 can also be realized.…”
Section: Chemical Reviewsmentioning
confidence: 99%
“…Graphdiyne (GDY), a new 2D carbon‐allotrope material consisting of hybrid states of sp 2 from benzene rings and sp from acetenyl groups, has been synthesized in recent years [ 15 , 16 , 17 ] and has shown great performances in various applications. [ 18 , 19 ] The charge trapping ability of graphdiyne has also been reported in many devices, like infrared detector, [ 20 ] high‐performance UV detector, [ 21 ] and resistive random access memory devices. [ 22 ] However, 2D GDY with relatively large‐area and smooth surface is difficult to obtain due to its sophisticated growth process, which poses a restraint on its desirable van der Waals coupling with other 2D materials.…”
Section: Introductionmentioning
confidence: 99%
“…This can be attributed to the lack of efficient exciton dissociation as a result of the strong binding energy of excitons in SWCNTs, and the quenching of excitons by m‐SWCNTs which is undesirable for constructing high‐performance devices. Indeed, s‐SWCNT‐based photodetectors have shown excellent performance that can be comparable to the high‐performance commercial detectors . For instance, an s‐SWCNT‐film based IR photodetector was introduced by Liu et al This high‐performance IR detector can operate at room temperature with highly improved detection capability comparable to other room temperature IR photodetectors based on other semiconductor materials and has a broadband response (785–2100 nm), excellent stability and large‐scale fabrication compatibility.…”
Section: Transistorsmentioning
confidence: 99%
“…To conquer this obstacle, p–n junctions, heterojunctions, and asymmetric electrodes have been reported in order to enhance exciton dissociation . For instance, the performance of s‐SWCNT‐based photodetectors was greatly enhanced by utilizing fullerene (C 60 ), graphene, and γ‐graphdiyne . Here, the impact of m‐ and s‐SWCNTs on the photodetection process was also investigated .…”
Section: Transistorsmentioning
confidence: 99%