Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm

Okamoto, Kuniyoshi; Kashiwagi, Junich; Tanaka, Taketoshi; Kubota, Masashi

doi:10.1063/1.3078818

Cited by 161 publications

(195 citation statements)

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“…Since the ballistic current dominates the electron spillover, this explains stronger efficiency deterioration in polar LEDs vs. more stable performance of nonpolar structures observed experimentally [4]. Similarly, the sharp raise of the ballistic component in nonpolar structure at higher injection levels can explain why, for instance, green laser diodes were implemented practically simultaneously on both polar and nonpolar templates without any substantial advantage of the later [5,6]. Figure 5 compares the injection characteristics in polar and nonpolar structures.…”

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Injection characteristics of polar and nonpolar multiple‐QW structures and active region ballistic overshoot

Kisin

El-Ghoroury

2011

Phys. Status Solidi C

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Electron ballistic overshoot of the active region is shown to dominate the leakage current in light‐emitting III‐nitride multi‐QW diode structures. At high injection levels typical for laser diodes, the overshoot‐assisted leakage is comparable in polar and nonpolar structures whilst in the low injection LED regime nonpolar structures reveal much smaller leakage; this complies with available observations of LED efficiency droop. We show that drift‐diffusion approximation for electron transport noticeably underestimates the leakage, especially in nonpolar structures. Ballistic spill‐over also increases the electron concentration in p ‐side waveguide layers and enhances the nonradiative recombination loss. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 87%

Injection characteristics of polar and nonpolar multiple‐QW structures and active region ballistic overshoot

Kisin

El-Ghoroury

2011

Phys. Status Solidi C

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“…1 Introduction Semipolar and nonpolar InGaN quantum wells (QW) may open the road towards commercial laser diodes in the green spectral range [1][2][3][4][5] and green LEDs with reduced droop [6]. These systems also allow a new angle of view on the physics of InGaN QW material science [7].…”

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Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

Schade

Schwarz

Wernicke

et al. 2011

Physica Status Solidi (b)

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Partial or full linear polarization is characteristic for the spontaneous emission of light from semipolar and nonpolar InGaN quantum wells. This property is an implication of the crystalline anisotropy as a basic property of the wurtzite structure. The influence of this anisotropy on the band structure and the transition matrix elements was calculated by a k x p-method for arbitrary quantum well orientations with respect to the c-axis; results are shown here in detail. Optical polarization is a direct consequence of a broken symmetry, mainly affecting the transition matrix elements from the conduction to the valence bands. Furthermore, the strain of the InGaN quantum well strongly depends on the crystal orientation of the substrate, resulting in a valence band mixing. The composition of the eigenfunctions has emerged to be most important for the polarization dependence of strained semipolar and nonpolar InGaN QW. The matrix elements, in combination with the thermal occupation of the bands, determine the polarization of the spontaneously emitted light. Our photoluminescence measurements of nonpolar QW match well with this model. However, in contrast to calculations with standard band parameters, the two topmost subbands show a larger separation in the emitted energy

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“…3 Indeed, the first GaInN based laser diodes with an emission wavelength at 500 nm have been shown by Okamoto et al on m-plane GaN substrates. 4 However, up to now, non-polar GaN substrates are still barely available, small in size, and also very expensive. As an alternative, several groups have reported heteroepitaxial growth of non-polar GaN layers on foreign substrates (c-LiAlO 2 , SiC, r-plane sapphire).…”

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Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Jönen

Rossów

Bremers

et al. 2011

Applied Physics Letters

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We report on the optical properties of m-plane GaInN/GaN quantum wells (QWs). We found that the emission energy of GaInN QWs grown on m-plane SiC is significantly lower than on nonpolar bulk GaN, which we attribute to the high density of stacking faults. Temperature and power dependent photoluminescence reveals that the GaInN QWs on SiC have almost as large internal quantum efficiencies as on bulk GaN despite the much higher defect density. Our results indicate that quantum-wire-like features formed by stacking faults intersecting the quantum wells provide a highly efficient light emission completely dominating the optical properties of the structures. V C 2011 American Institute of Physics. [doi:10.1063/1.3607301] In the past few years, GaN-based light emitting devices grown on non-polar planes have continuously attracted increasing attention due to their promising optical properties. While conventional structures grown on the polar c-plane suffer from the quantum-confined Stark effect (QCSE), 1 GaN layers grown on non-polar surfaces are free from polarization fields in growth direction. 2 The increased transition probability may result in an improved device efficiency leading to increased light output powers and/or reduced threshold current densities. 3 Indeed, the first GaInN based laser diodes with an emission wavelength at 500 nm have been shown by Okamoto et al. on m-plane GaN substrates. 4 However, up to now, non-polar GaN substrates are still barely available, small in size, and also very expensive. As an alternative, several groups have reported heteroepitaxial growth of non-polar GaN layers on foreign substrates (c-LiAlO 2 , SiC, r-plane sapphire). [5][6][7] However, most of these structures were affected by high densities of threading dislocations (TDs) and basal plane stacking faults (BSFs), which are terminated by either prismatic stacking faults (PSFs) or partial dislocations. 8 While TDs are known to act as nonradiative recombination centers, BSFs are optically active since they can be considered as cubic (zincblende) ABC phases in the wurtzite ABAB stacking sequence. Such a structure forms a type-II heterojunction which may capture electrons and holes resulting in optical transitions below the wurtzite GaN bandgap energy. 9-11 More recently, a BSF related emission from aplane GaN/AlGaN quantum well (QW) structures was reported, suggesting the formation of quantum-wire-like states in the regions where BSFs intersect the QWs. 12,13 In this paper, we investigate the optical properties of m-plane GaInN/GaN QW structures grown on silicon carbide (SiC). In particular, we show that stacking faults intersecting the QWs dominate the optical properties of these structures.Our samples were grown on m-plane 6H-SiC, m-plane bulk GaN substrates, and a-plane GaN templates (grown by hydride vapor phase epitaxy) in a low pressure metalorganic vapor phase epitaxy system with a horizontal reactor (Aixtron AIX 200RF). The precursors used were trimethylgallium, triethylgallium, trimethylaluminum, trimethylindium,...

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Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm

Cited by 161 publications

References 24 publications

Injection characteristics of polar and nonpolar multiple‐QW structures and active region ballistic overshoot

Injection characteristics of polar and nonpolar multiple‐QW structures and active region ballistic overshoot

Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

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