Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

Zhong, Le; Jiang, Liudi; Huang, Ruomeng; Groot, C. H. de

doi:10.1063/1.4867198

Cited by 54 publications

(42 citation statements)

References 27 publications

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“…This suggests a noticeable contribution of the Schottky barrier at the amorphous GST/ TiN interfaces to the overall resistance. Similar behavior has also been observed in other metal/semiconductor memory device [17]. The disappearance of the Schottky barrier upon annealing could be due to the annealing process which is believed to improve the Schottky contacts between metal and semiconductor contacts [18], or due to the band gap reduction from amorphous state to crystalline state [19].…”

Section: Contact Resistancesupporting

confidence: 76%

Contact resistance measurement of Ge₂Sb₂Te₅phase change material to TiN electrode by spacer etched nanowire

Huang

Kiang

Chen

et al. 2014

Semicond. Sci. Technol.

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Ge 2 Sb 2 Te 5 (GST) phase change nanowires have been fabricated using a top-down spacer etch process. This approach enables controls over the dimension and location of the nanowires without affecting the electrical properties. Phase change devices based on these nanowires have been used to systematically investigate the contact resistance between GST phase change material and TiN metal electrodes. The specific contact resistance was found to be 7.96 × 10 −5 Ω cm 2 for crystalline GST and 6.39 × 10 −2 Ω cm 2 for amorphous GST. The results suggest that contact resistance plays a dominant role in the total resistance of GST memory device in both crystalline and amorphous states.

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Section: Contact Resistancesupporting

confidence: 76%

Contact resistance measurement of Ge₂Sb₂Te₅phase change material to TiN electrode by spacer etched nanowire

Huang

Kiang

Chen

et al. 2014

Semicond. Sci. Technol.

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“…The a-SiC based RMs also show promising performance under high radiation conditions [4]. Despite the promising results thus far, it was also observed that relatively high forming voltage (VFORM), typically 4 to 5 V, were needed to switch a pristine a-SiC based RM into LRS [21]. This is likely attributable to the low Cu drift rate in SiC which requires high electric field to form the Cu filament in the a-SiC matrix.…”

Section: Introductionmentioning

confidence: 79%

Amorphous SiC resistive memory with embedded Cu nanoparticles

Fan

Jiang

Wang

et al. 2017

Microelectronic Engineering

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Amorphous SiC with embedded Cu nanoparticles (a-SiC:Cu) was investigated as the insulator layer of Cu/aSiC:Cu/Au resistive memory. The effect of the Cu embedding on resistive switching characteristics was studied for 20 and 30 vol% Cu. Reduced forming and SET voltages and increased endurance was observed for devices with 30Cu%. At the same time, all key advantageous characteristics of amorphous SiC resistive memory such as ON/OFF ratio of 10 7 and the co-existence of bipolar and unipolar modes were maintained upon Cu embedding. All above suggests that Cu embedding could be considered as a promising method to improve the overall performance of Cu/a-SiC:Cu/Au resistive memories.

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“…Amorphous SiC shows great potential as the electrolyte layer with excellent state stability and ultra-high ratio memory cells, although slow to switch [2,3]. This was previously attributed to a high diffusion barrier of SiC for Cu along with high thermal conductivity [4].…”

Section: Introductionmentioning

confidence: 99%

Properties of SiC Resistive Memory for Harsh Environments

Morgan¹,

Fan²,

Huang³

et al. 2015

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials

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Amorphous silicon carbide resistive memory cells are shown to exhibit the highest R OFF /R ON ratio recorded for any resistive memory in pulsed switching. The switching characteristics are investigated and fitted to a numerical model. The SET mechanism for these cells is found to be due to ionic motion without joule heating contributions, leading to large V SET . The high thermal conductivity and resistivity of the SiC memory cells result in slow switching but, with high state and thermal stability, show potential for harsh environment use. Radiation properties of SiC memory cells are investigated. No change was seen in switching properties nor in conductive mechanism, up to 2Mrad(Si) using 60 Co ionizing gamma radiation.

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Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

Abstract: Articles you may be interested in

Cited by 54 publications

References 27 publications

Contact resistance measurement of Ge₂Sb₂Te₅phase change material to TiN electrode by spacer etched nanowire

Contact resistance measurement of Ge₂Sb₂Te₅phase change material to TiN electrode by spacer etched nanowire

Amorphous SiC resistive memory with embedded Cu nanoparticles

Properties of SiC Resistive Memory for Harsh Environments

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Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

Abstract: Articles you may be interested in

Cited by 54 publications

References 27 publications

Contact resistance measurement of Ge2Sb2Te5phase change material to TiN electrode by spacer etched nanowire

Contact resistance measurement of Ge2Sb2Te5phase change material to TiN electrode by spacer etched nanowire

Amorphous SiC resistive memory with embedded Cu nanoparticles

Properties of SiC Resistive Memory for Harsh Environments

Contact Info

Product

Resources

About

Contact resistance measurement of Ge₂Sb₂Te₅phase change material to TiN electrode by spacer etched nanowire

Contact resistance measurement of Ge₂Sb₂Te₅phase change material to TiN electrode by spacer etched nanowire