Nonreciprocal Transport in a Bilayer of MnBi₂Te₄ and Pt

Abstract

MnBi2Te 4 (MBT) is the first intrinsic magnetic topological insulator with the interaction of spin-momentum locked surface electrons and intrinsic magnetism, and it exhibits novel magnetic and topological phenomena. Recent studies suggested that the interaction of electrons and magnetism can be affected by the Mn-doped Bi2Te 3 phase at the surface due to inevitable structural defects. Here we report an observation of nonreciprocal transport, i.e. current-direction-dependent resistance, in a bilayer composed of antiferromagnetic MBT and nonmagnetic Pt. The emergence of the nonreciprocal response below the Néel temperature confirms a correlation between nonreciprocity and intrinsic magnetism in the surface state of MBT. The angular dependence of the nonreciprocal transport indicates that nonreciprocal response originates from the asymmetry scattering of electrons at the surface of MBT mediated by magnon. Our work provides an insight into nonreciprocity arising from the correlation between magnetism and Dirac surface electrons in intrinsic magnetic topological insulators.

Room‐Temperature, Current‐Induced Magnetization Self‐Switching in A Van Der Waals Ferromagnet

“…The reported data were taken from references, Pt/Fe 3 GeT 2 (FGT) , [38,42] WTe 2 /FGT , [2,43,44] TI/ FGT , [45] FGT, [19] Ta/Cr 2 Ge 2 Te 6 (CGT), [46,47] TI/CGT, [48] TI/CrTe 2, [49] ZrTe 2 /CrTe 2, [50] and Pt/MnBi 2 Te 4 (MBT). [51] observation of current-induced perpendicular magnetization self-switching in the FCGT layered ferromagnet at room temperature with a switching current in the range of 10 6 A cm −2 . Unlike most SOT devices, a spin-orbit coupling layer is not required in this device since the SOT is generated by the low symmetry within the bulk magnetic material itself.…”

“…The reported data were taken from references, Pt/Fe 3 GeT 2 (FGT) , [ 38,42 ] WTe 2 /FGT , [ 2,43,44 ] TI/ FGT , [ 45 ] FGT, [ 19 ] Ta/Cr 2 Ge 2 Te 6 (CGT), [ 46,47 ] TI/CGT, [ 48 ] TI/CrTe 2, [ 49 ] ZrTe 2 /CrTe 2, [ 50 ] and Pt/MnBi 2 Te 4 (MBT). [ 51 ]…”

“…This work demonstrates a roomtemperature, current-induced magnetization with a current density of ≈10 6 A cm −2 in the FCGT system. The reported data were taken from references, Pt/Fe 3 GeT 2 (FGT) ,[38,42] WTe 2 /FGT ,[2,43,44] TI/ FGT ,[45] FGT,[19] Ta/Cr 2 Ge 2 Te 6 (CGT),[46,47] TI/CGT,[48] TI/CrTe 2,[49] ZrTe 2 /CrTe 2,[50] and Pt/MnBi 2 Te 4 (MBT) [51].…”

Research progress of intrinsic magnetic topological insulator MnBi₂Te₄

“…此外, 国际上, 哈佛大学的Xu Su-Yang 与加州大学洛杉矶分校倪霓 [37] 合作发现偶数层 MBT在电场作用下产生层霍尔效应, 有助于表征 其轴子绝缘态. 加州大学洛杉矶分校Wang研究 组 [38] 发现了磁性拓扑绝缘体MBT极性可调的反 常霍尔效应. 新加坡南洋理工大学的王骁及其合作 者 研 究 组 [39] 和 Zhang等 [40] 分 别 在 MBT/Pt和 MBT样品中观测到非互易效应.…”

Controlled large non-reciprocal charge transport in an intrinsic magnetic topological insulator MnBi2Te4

“…External magnetic field turns out to be an effective tool to manipulate such magnetic states as well as the charge transport. Besides, the van der Waals nature of MnBi 2 Te 4 makes it possible to realize more attractive phenomena by changing stacking sequence or assembling heterostructure [23][24][25][26][27][28][29][30] .…”