“…It is interesting to note that when the applied magnetic field is normalized to B cos θ, all of the curves overlay with each other, showing that only the magnetic-field perpendicular component B cos θ contributes to the transport process of the nanosheets. Such a property is a signature of the existence of a 2D transport channel in the sample. − For 2D-dominated transport, only the perpendicular magnetic field ( B // c axis) could affect the magnetotransport behavior, while the horizontal magnetic field plays no role. When the magnetic field deviates from the perpendicular configuration, the magnetotransport signal will only respond to the perpendicular component of magnetic fields, where B cos θ is the effective applied magnetic field.…”
Well-established knowledge about inversion-symmetric Bi 2 Te x Se 3−x topological insulators characterizes the promising new-generation quantum device. Noticeably, the inversion asymmetric phase containing different surface electronic structures may create an extra topological phenomenon pointing to a new device paradigm. Herein, Janus Bi 2 TeSe 2 single-crystal nanosheets with an unconventional stacking sequence of Se−Bi−Se−Bi−Te are realized via chemical vapor deposition growth, which is clarified by atomically resolved AC-STEM and elemental mapping. An obvious polarization-dependent second-harmonic generation with a representative 6-fold rotational symmetry is detected due to the broken out-of-plane mirror symmetry in this system. Lowtemperature transport measurements display a strange metal-like linear-in-temperature resistivity. Anomalous conductance peaks under low magnetic fields induced by the weak antilocalization effect of topological surface states and the two-dimensional transportdominated anisotropic magnetoresistance are revealed. These findings correlate the Janus Bi 2 TeSe 2 phase with emerging physics topics, which would inspire fresh thoughts in well-developed Bi 3 Te x Se 3−x topological insulators and open up opportunities for exploring hybrid nonlinear optoelectronic topological devices.
“…It is interesting to note that when the applied magnetic field is normalized to B cos θ, all of the curves overlay with each other, showing that only the magnetic-field perpendicular component B cos θ contributes to the transport process of the nanosheets. Such a property is a signature of the existence of a 2D transport channel in the sample. − For 2D-dominated transport, only the perpendicular magnetic field ( B // c axis) could affect the magnetotransport behavior, while the horizontal magnetic field plays no role. When the magnetic field deviates from the perpendicular configuration, the magnetotransport signal will only respond to the perpendicular component of magnetic fields, where B cos θ is the effective applied magnetic field.…”
Well-established knowledge about inversion-symmetric Bi 2 Te x Se 3−x topological insulators characterizes the promising new-generation quantum device. Noticeably, the inversion asymmetric phase containing different surface electronic structures may create an extra topological phenomenon pointing to a new device paradigm. Herein, Janus Bi 2 TeSe 2 single-crystal nanosheets with an unconventional stacking sequence of Se−Bi−Se−Bi−Te are realized via chemical vapor deposition growth, which is clarified by atomically resolved AC-STEM and elemental mapping. An obvious polarization-dependent second-harmonic generation with a representative 6-fold rotational symmetry is detected due to the broken out-of-plane mirror symmetry in this system. Lowtemperature transport measurements display a strange metal-like linear-in-temperature resistivity. Anomalous conductance peaks under low magnetic fields induced by the weak antilocalization effect of topological surface states and the two-dimensional transportdominated anisotropic magnetoresistance are revealed. These findings correlate the Janus Bi 2 TeSe 2 phase with emerging physics topics, which would inspire fresh thoughts in well-developed Bi 3 Te x Se 3−x topological insulators and open up opportunities for exploring hybrid nonlinear optoelectronic topological devices.
Bismuth oxychalcogenides (Bi2O2X, X=S, Se, Te), a family of non–van der Waals (non-vdW) two-dimensional (2D) semiconductors, are attracting significant attention due to their outstanding semiconducting properties and huge potential in...
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