We report the temperature dependence of the spin pumping effect for Y3Fe5O12 (YIG, 0.9 μm)/NiO (t
NiO nm)/W (6 nm) (t
NiO = 0, 1, 2, 10 nm) heterostructures. All samples exhibit a strong temperature-dependent the inverse spin Hall effect (ISHE) signal I
c and sensitivity to the NiO layer thickness. We observe a dramatic decrease of I
c with inserting thin NiO layer between YIG and W layers indicating that the inserting NiO layer significantly suppresses the spin transport from YIG to W. In contrast to noticeable enhancement in YIG/NiO (t
NiO ≈ 1-2 nm)/Pt, the suppression of spin transport may be closely related to the specific interface-dependent spin scattering, spin memory loss, and spin conductance at the NiO/W interface. Besides, the I
c of YIG/NiO/W exhibits a maximum near the T
N of the AF NiO layer, which is due to the spins are transported dominantly by incoherent thermal magnons.