Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Álvarez, A. Díaz; Xu, Tao; Tütüncüoǧlu, Gözde; Demonchaux, Thomas; Nys, J.P.; Berthe, Maxime; Matteini, Federico; Potts, Heidi; Tománek, David; Patriarche, G.; Lampin, Jean‐François; Coinon, C.; Morral, Anna Fontcuberta i; Dunin-Borkowski, Rafal E.; Ebert, Ph.; Grandidier, B.

doi:10.1021/acs.nanolett.5b01802

Cited by 9 publications

(5 citation statements)

References 41 publications

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“…Since the growth of GaAs NWs is largely maintained at high As/Ga flux ratio (i.e., As-rich condition; see Table S1 in the Supporting Information), thus As Ga is a stable defect in synthesized GaAs NWs. Such a result can be supported by recent experiment 42 in which a large concentration of As Ga defects has been identified by highresolution scan tunneling microscopy (STM).…”

Section: Resultssupporting

confidence: 55%

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Impact of Surface Point Defects on Electronic Properties and p-Type Doping of GaAs Nanowires

Shu

Yang²,

Liang³

et al. 2016

J. Phys. Chem. C

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Gallium arsenide (GaAs) nanowires possess a great potential as a fundamental building block for the next-generation electronic and optoelectronic devices, but their applications are limited by the p-type doping. Improving the p-type doping efficiency of GaAs nanowires depends on understanding the doping limits and developing effective methods to reactive p-type dopants. Here the stability of various surface point defects and their role in electronic structure and p-type doping of GaAs nanowires are studied by using first-principles calculation within density functional theory. Our results demonstrate that As antisite (AsGa) is a highly stable surface point defect under As-rich condition irrespective of bare and H-passivated GaAs nanowires. The formed AsGa defects bring deep donor-type levels into the band gap, which is responsible for the deactivation of p-type dopants in GaAs nanowires. To suppress the impact of AsGa defects on the p-type doping of GaAs nanowires, we propose two feasible methods by reducing As chemical potential (or As partial pressure) and passivating with appropriate surface species (e.g., NO2), respectively. This work provides a new insight into the origin of p-type doping limits and the guidance for the realization of highly efficient p-type doping in III–V semiconductor nanowires.

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Section: Resultssupporting

confidence: 55%

“…In principle, the effect of Mg dopant and As Ga defect on electronic structure of NWs will be independent of each other when their distance is enough large. However, there are a large number of As Ga defects on the NW surface, 42 and thus the intrinsic point defects must be a key factor for limiting the p-type doping of GaAs NWs.…”

Section: Resultsmentioning

confidence: 99%

Impact of Surface Point Defects on Electronic Properties and p-Type Doping of GaAs Nanowires

Shu

Yang²,

Liang³

et al. 2016

J. Phys. Chem. C

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“…While the MBE growth of III-V semiconductors usually yields stoichiometric material, since group-V elements stick to the surface only if group-III atoms are present, it has been made possible to grow nonstoichiometric binary compounds * Corresponding author: bruno.grandidier@isen.iemn.univ-lille1.fr with high crystal quality by lowering the substrate temperature [2]. In this case, group-V elements are also incorporated on cation lattice sites, giving rise to group-V antisites [3][4][5]. Such a low-temperature growth regime has been much less investigated for ternary compounds [6][7][8][9] and it is an open question whether the excess of anion atoms incorporated on the cation sublattice follows the same fraction of group-V elements incorporated on the anion sublattice.…”

Section: Introductionmentioning

confidence: 99%

Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

Demonchaux

Sossoe

Dzagli

et al. 2018

Phys. Rev. Materials

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While nonstoichiometric binary III-V compounds are known to contain group-V antisites, the growth of ternary alloys consisting of two group-V elements might give additional degrees of freedom in the chemical nature of these antisites. Using cross-sectional scanning tunneling microscopy (STM), we investigate lowtemperature-grown dilute GaAs 1−x P x alloys. High concentrations of negatively charged point defects are found. Combined with transmission electron microscopy and pump-probe transient reflectivity, this study shows that the defects have a behavior similar to the group-V antisites. Further analyses with x-ray diffraction point to the preferential incorporation of arsenic antisites, consistent with ab initio calculations, that yield a formation energy 0.83 eV lower than for phosphorus antisites. Although the negative charge carried by the arsenic antisites in the STM images is shown to be induced by the proximity of the STM tip, the arsenic antisites are not randomly distributed in the alloy, providing insight into the evolution of their charge state during the growth.

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“…Reversible arsenic (As)-capping methods have been implemented to protect 2D thin films [31][32][33][34][35] and some one-dimensional NWs. [36][37][38][39] However none of them clearly reported on the efficiency of the method and/or on the structural and chemical properties of the capping/decapping procedure. But this method could indeed be a general strategy for protecting the surface of III-V NWs, therefore facilitating epitaxial shell growth in various deposition reactors (MBE, CVD) equipped with a heating sample holder.…”

Section: Introductionmentioning

confidence: 99%

GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell

et al. 2016

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We propose an arsenic-capping/decapping method, allowing the growth of an epitaxial shell around the GaAs nanowire (NW) core which is exposed to an ambient atmosphere, and without the introduction of impurities. Self-catalyzed GaAs NW arrays were firstly grown on Si(111) substrates by solid-source molecular beam epitaxy. Aiming for protecting the active surface of the GaAs NW core, the arsenic-capping/decapping method has been applied. To validate the effect of this method, different core/shell NWs have been fabricated. Analyses highlight the benefit of the As capping-decapping method for further epitaxial shell growth: an epitaxial shell with a smooth surface is achieved in the case of As-capped-decapped GaAs NWs, comparable to the in situ grown GaAs/AlGaAs NWs. This As capping method opens a way for the epitaxial growth of heterogeneous material shells such as functional oxides using different reactors.

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Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Cited by 9 publications

References 41 publications

Impact of Surface Point Defects on Electronic Properties and p-Type Doping of GaAs Nanowires

Impact of Surface Point Defects on Electronic Properties and p-Type Doping of GaAs Nanowires

Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell

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