Nonstoichiometric selenium rich SixSe1−x films

Malyj, M.; Espinosa, G. P.; Remeika, J. P.

doi:10.1016/0038-1098(85)90637-4

Cited by 11 publications

(4 citation statements)

References 13 publications

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“…The observed highly intensive and narrow peak at 437.4 cm −1 for SiS 2 and 244 cm −1 for SiSe 2 corresponds to the A g symmetric stretching mode of SiX 4 , which suggests that the synthesized product is highly crystalline. 16,17 All of the observed Raman peaks of SiS 2 and SiSe 2 are assigned and matched well with previously reported Raman results. 18 The SiS 2 and SiSe 2 samples exhibit high reactivity to ambient exposure, particularly to air and moisture, which triggers the formation of toxic gases such as H 2 S and H 2 Se.…”

Section: Resultssupporting

confidence: 89%

SiX₂ (X = S, Se) Single Chains and (Si–Ge)X₂ Quaternary Alloys

Lee,

Choi,

et al. 2024

ACS Nano

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Section: Resultssupporting

confidence: 89%

SiX₂ (X = S, Se) Single Chains and (Si–Ge)X₂ Quaternary Alloys

Lee,

Choi,

et al. 2024

ACS Nano

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“…Because of fast ion conductivity of Ag and related ions in it, vitreous SiSe 2 is recognized as one of the basic solid electrolytes for advanced high-energy electrochemical cells [13]. A great deal of work has been done to understand the structure and vibrational spectra of crystalline and glassy SiSe 2 [14]- [20]. Phonon spectra and thermodynamical properties of g-SiSe 2 have been determined using a variety of experimental techniques [21]- [23].…”

mentioning

confidence: 99%

Dynamical fracture in SiSe ₂ nanowires—a molecular-dynamics study

Kalia

Vashishta

1996

Europhys. Lett.

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The dynamics of fracture in SiSe 2 nanowires under constant uniaxial strain is investigated using the molecular-dynamics (MD) method. It is found that the nanowires remain highly crystalline and stay in the elastic-deformation regime up to a critical strain. Under large uniaxial strain, fracture of the nanowires is preceded by initiation of an amorphous region in the chains at the outermost layer. The dynamics of amorphization and fracture are discussed.( 1 ) In the present work, "dynamical fracture" is used in the sense of time evolution of fracture.

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“…Furthermore, a significant improvement in grain size was observed in the Si-substituted absorber thin films compared to that in the control CZTSSe sample, which enables more efficient transportation of photon-generated carriers in the Si-substituted films and undoubtedly elevates photovoltaic performance of the final devices. The enlarged grain size may result from the increased liquid phases (such as Si-Se) [42][43][44] appearing in the film during the annealing process after Si substitution, which may act as crystallization flux for the grain growth and thus increases the grain size. Meanwhile, the cross sectional SEM images of all the CZTSSe-based absorbers are ≈1.2 μm thick, thus ensuring enough light absorption.…”

Section: Resultsmentioning

confidence: 99%

Passivating Sn_Zn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells

Qi,

Wei,

et al. 2023

Adv Funct Materials

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The SnZn defect passivation and heterojunction interface energetics‐modification are crucial for further improvement of open‐circuit voltage (Voc) and efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Herein, a simple but effective cation substitution strategy is reported to promote the performance of CZTSSe devices by simultaneously modifying the absorber and heterojunction interface. This is achieved by introducing the organic silicon salt C8H20O4Si into CZTSSe precursor solution as a source of silicon to partially substitute Sn with Si. Systematic studies reveal that there are two mechanisms synergistically contributing to the increase of efficiency: 1) This strategy can passivate the undesired SnZn defect in CZTSSe absorber more efficiently, leading to at least one order of magnitude lower SnZn defect density and beneficial carrier transport properties; 2) After Si incorporation, the conduction band minimum of the CZTSSe is upshifted, thus enlarging the bandgap, which ultimately optimizes the energy level structure at the CdS/CZTSSe interface and reduces interfacial energy loss by decreasing the carrier transport barrier. Consequently, the CZTSSe device with 7% Si substitution delivers a satisfactory efficiency of 13.02% owing to an increase in Voc. It is hoped the Si substitution strategy reported here can provide inspiration for developing advanced CZTSSe devices with broad application prospects.

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Nonstoichiometric selenium rich SixSe1−x films

Cited by 11 publications

References 13 publications

SiX₂ (X = S, Se) Single Chains and (Si–Ge)X₂ Quaternary Alloys

SiX₂ (X = S, Se) Single Chains and (Si–Ge)X₂ Quaternary Alloys

Dynamical fracture in SiSe ₂ nanowires—a molecular-dynamics study

Passivating Sn_Zn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells

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Nonstoichiometric selenium rich SixSe1−x films

Cited by 11 publications

References 13 publications

SiX2 (X = S, Se) Single Chains and (Si–Ge)X2 Quaternary Alloys

SiX2 (X = S, Se) Single Chains and (Si–Ge)X2 Quaternary Alloys

Dynamical fracture in SiSe 2 nanowires—a molecular-dynamics study

Passivating SnZn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells

Contact Info

Product

Resources

About

SiX₂ (X = S, Se) Single Chains and (Si–Ge)X₂ Quaternary Alloys

SiX₂ (X = S, Se) Single Chains and (Si–Ge)X₂ Quaternary Alloys

Dynamical fracture in SiSe ₂ nanowires—a molecular-dynamics study

Passivating Sn_Zn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells