Nonstoichiometry and thermal expansion of SnTe

Nonstoichiometry and Properties of SnTe Semiconductor Phase of Variable Composition

“…The possible reasons for the appearance of the temperature peculiarities are the system's passing through different quantum states; the processes of self-organization taking place in an open system; microdomain structure of thin films; relaxation processes. The pronounced anomalies observed in the ranges of 135-150 and 190-200 K are (Nashchekina et al, 2008).…”

“…To additionally confirm the existence of new PT and to establish the influence of the NSD concentration on the character of the relaxation processes, we measured the α(T) dependences using two regimes described in 2.3.4. (Nashchekina et al, 2008). For the samples measured under the stationary regime, an increase in α with increasing temperature continued up to ~ 130-140 K (the Debye temperature of SnTe), and the α(Т) curves exhibited anomalies.…”

“…δ is recalculated relative to the Ba 119 SnO 3 source (Baltrunas et al, 1986). a: 1 -δ, 2 -S, 3 -Γ; b: dynamic regime; c: 1 -stationary regime; 2 -dynamic regime (Nashchekina et al, 2008).…”

“…That is why we have conducted studies on the influence of deviation from stoichiometry, temperature, and kinetic factors on α of SnTe crystals Rogacheva, 2003b;Nashchekina et al, 2008). The α(T) dependences in the range 5-300 K or 77-300 K were obtained under two regimes.…”

Solid state phase equilibria in the Te-rich region of the RE (RE=Ce, Nd and Pr)–Sn–Te ternary systems

“…The IV-VI compounds are promising candidate materials that can be utilized in thermoelectric, optoelectronic and the other applications [1][2][3][4]. Among them, the binary amorphous and crystalline SnTe and GeTe compounds have attracted numerous studies in the past decades [2,[5][6][7].…”