Nonthermal pulsed laser annealing of Si; plasma annealing

Vechten, J. A. Van; Tsu, Raphael; Saris, F.W.

doi:10.1016/0375-9601(79)90242-1

Cited by 283 publications

(85 citation statements)

References 20 publications

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“…Nonthermal phase transitions have been observed in multiple semiconducting and dielectric materials: Si [1][2][3][4][5][6], Ge [7,8], GaAs [9], InSb [10], Ge 2 Sb 2 Te 5 [11], and C [12]. Band gap materials are particularly amenable to nonthermal processes because their band gaps inhibit electronic relaxation.…”

Section: Introductionmentioning

confidence: 99%

Simulating electronically driven structural changes in silicon with two-temperature molecular dynamics

Darkins

Murphy

et al. 2018

Phys. Rev. B

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Radiation can drive the electrons in a material out of thermal equilibrium with the nuclei, producing hot, transient electronic states that modify the interatomic potential energy surface. We present a rigorous formulation of two-temperature molecular dynamics that can accommodate these electronic effects in the form of electronic-temperature-dependent force fields. Such a force field is presented for silicon, which has been constructed to reproduce the ab initio-derived thermodynamics of the diamond phase for electronic temperatures up to 2.5 eV, as well as the structural dynamics observed experimentally under nonequilibrium conditions in the femtosecond regime. This includes nonthermal melting on a subpicosecond timescale to a liquidlike state for electronic temperatures above ∼1 eV. The methods presented in this paper lay a rigorous foundation for the large-scale atomistic modeling of electronically driven structural dynamics with potential applications spanning the entire domain of radiation damage.

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Section: Introductionmentioning

confidence: 99%

Simulating electronically driven structural changes in silicon with two-temperature molecular dynamics

Darkins

Murphy

et al. 2018

Phys. Rev. B

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“…Several years ago, Van Vechten, Tsu, and Saris suggested that semiconducting materials with a diamond lattice structure could be disordered by direct excitation of the electronic system while the lattice modes remain vibrationally cold [1]. The diamond structure is stabilized by bond charges in the tetrahedral sp bonds.…”

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confidence: 99%

Ultrafast electronic disordering during femtosecond laser melting of GaAs

et al. 1991

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“…It may be explained by the appearance of photoinduced plasma of free carriers, leading to a softening of the crystalline lattice. Then, the material can be in a quasiliquid state even below its melting temperature, 41,42 which consequently reduces the measured DTM. The difference between the irradiation laser fluence F 0 and the DTM corresponds to the fluence part directly involved in the target heating beyond melting.…”

Section: Methodsmentioning

confidence: 98%

Insight into electronic mechanisms of nanosecond-laser ablation of silicon

Marine

Bulgakova

Patrone

et al. 2008

Journal of Applied Physics

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To cite this version:Wladimir Marine, N.M. Bulgakova, Lionel Patrone, Igor Ozerov. Insight into electronic mechanisms of nanosecond-laser ablation of silicon. We present experimental and theoretical studies of nanosecond ArF excimer laser desorption and ablation of silicon with insight into material removal mechanisms. The experimental studies involve a comprehensive analysis of the laser-induced plume dynamics and measurements of the charge gained by the target during irradiation time. At low laser fluences, well below the melting threshold, high-energy ions with a narrow energy distribution are observed. When the fluence is increased, a thermal component of the plume is formed superimposing on the nonthermal ions, which are still abundant. The origin of these ions is discussed on the basis of two modeling approaches, thermal and electronic, and we analyze the dynamics of silicon target excitation, heating, melting, and ablation. An electronic model is developed that provides insight into the charge-carrier transport in the target. We demonstrate that, contrary to a commonly accepted opinion, a complete thermalization between the electron and lattice subsystems is not reached during the nanosecond-laser pulse action. Moreover, the charging effects can retard the melting process and have an effect on the overall target behavior and laser-induced plume dynamics.

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Nonthermal pulsed laser annealing of Si; plasma annealing

Cited by 283 publications

References 20 publications

Simulating electronically driven structural changes in silicon with two-temperature molecular dynamics

Simulating electronically driven structural changes in silicon with two-temperature molecular dynamics

Ultrafast electronic disordering during femtosecond laser melting of GaAs

Insight into electronic mechanisms of nanosecond-laser ablation of silicon

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