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Stesmans, André; Somers, P; Afanasʼev, Valeri

doi:10.1103/physrevb.79.195301

Cited by 28 publications

(11 citation statements)

References 39 publications

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“…À g f:e: ðGe DBÞ=½g ? À g f:e: Â ðSiP b0 Þ is well in line with the ratio Ge = Si ¼ 940 cm À1 =142 cm À1 [13,[23][24][25]. Another solid argument in favor of the assignment comes from the results obtained on Ge(001) with the contactless EDMR technique, showing DB activity at the Ge/oxide interface [11].…”

supporting

confidence: 55%

“…In this context, solid evidence of the Ge DB at the Ge(001)/Ge oxide interface has been recently reported [11,12]. Electrically detected magnetic resonance (EDMR) spectroscopy revealed a nontrigonal symmetry of the Ge DB at the (001) oriented interface with its elemental oxide, therein resembling a similar finding at the ð001ÞSi x Ge 1Àx =SiO 2 interface [13,14], which, however, shows a different point symmetry. The lack of experimental evidence reporting a trigonal DB at the Geð001Þ=GeO 2 interface is somehow surprising.…”

mentioning

confidence: 65%

“…This result is also in good agreement with previous measurements on the Ge DB at the Si x Ge 1Àx =SiO 2 interface giving g ? % 0:0074 [13]. The role of the surface orientation invokes a nontrivial interpretation of the Ge DB nature which should be related to the details of the oxidation process and its interplay with the suboxide bond net.…”

mentioning

confidence: 99%

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Evidence of Trigonal Dangling Bonds at the Ge(111)/Oxide Interface by Electrically Detected Magnetic Resonance

Paleari

Baldovino²,

Molle³

et al. 2013

Phys. Rev. Lett.

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Despite a renewed interest in Ge as a competitor with Si for a broad range of electronic applications, the microstructure and the electronic properties of the dangling bonds that, in analogy with Si, are expected at the Ge/oxide interface have escaped a firm spectroscopy observation and characterization. Clear evidence based on contactless electrically detected magnetic resonance spectroscopy of a dangling bond at the Geð111Þ=GeO 2 interface is reported in this Letter. This result supports the similarity between dangling bonds at the Si(111)/oxide and Ge(111)/oxide interfaces, both showing C 3v trigonal point symmetry with the main axis oriented along the h111i direction. In contrast, at the Ge(001)/oxide interface the absence of the trigonal center in favor of a lower symmetry dangling bond marks the difference with the Si(001)/ oxide interface, where both centers are present and the one having higher point symmetry prevails. This fact is rationalized in terms of suboxide interface rearrangement and oxide viscoelasticity, which promote the generation of the nonaxial centers at distorted dimers. The unambiguous identification of the centers at the Ge/oxide interfaces yields a deeper insight into the physical properties of the suboxide interface structure and offers a valid indicator for the evaluation of different surface capping and passivation techniques, with the potential to boost the Ge-related technology.

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supporting

confidence: 55%

mentioning

confidence: 65%

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Evidence of Trigonal Dangling Bonds at the Ge(111)/Oxide Interface by Electrically Detected Magnetic Resonance

Paleari

Baldovino²,

Molle³

et al. 2013

Phys. Rev. Lett.

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“…9,10 ESR has been used extensively to characterize DB defects at silicon/oxide interfaces, 9,10 but has been unable to detect germanium DBs at germanium/oxide interfaces. 8 Germanium DBs do become detectable when germanium is alloyed with silicon [11][12][13][14] (7%−55% silicon). Various explanations have been proposed to explain this result; they fall into two main categories: one is based on stress, the other on the position of the germanium DB levels.…”

mentioning

confidence: 99%

“…One proposal is that the DB concentration strongly varies with stress at the interface, being very low for pure germanium and increasing when silicon is added. [11][12][13][14]19 The effect of stress on DB concentration was studied in detail at Si/SiO 2 interfaces. 9 By varying the oxidation temperature, which effectively controls the stress at the interface, the DB concentration at Si/SiO 2 interfaces was found to vary from 10 13 to less than 10 10 DBs per cm 2 .…”

mentioning

confidence: 99%

Dangling bonds and vacancies in germanium

2013

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The quest for metal-oxide-semiconductor field-effect transistors (MOSFETs) with higher carrier mobility has triggered great interest in germanium-based MOSFETs. Still, the performance of germanium-based devices lags significantly behind that of their silicon counterparts, possibly due to the presence of defects such as dangling bonds (DBs) and vacancies. Using screened hybridfunctional calculations we investigate the role of DBs and vacancies in germanium. We find that the DB defect in germanium has no levels in the band gap; it acts as a negatively charged acceptor with the (0/−1) transition level below the valence-band maximum (VBM). This explains the absence of electron spin resonance observations of DBs in germanium. The vacancy in germanium has a much lower formation energy than the vacancy in silicon, and is stable in a number of charge states, depending on the position of the Fermi-level. We find the (0/−1) and (−1/−2) transition levels at 0.16 eV and 0.38 eV above the VBM; the spacing of these levels is explained based on the strength of intra-orbital repulsion. We compare these results with calculations for silicon, as well as with available experimental data.

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