We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the presence of domain walls in junctions of various sizes. In the antiparallel (AP) to parallel (P) switching, a nucleation phase is followed by an irreversible flow of a wall through the sample at an average velocity of 40 m/s with back and forth oscillation movements indicating a Walker propagation regime. A model with a single-wall locally responding to the spin-torque reproduces the essential dynamical signatures of the reversal. The P to AP transition has a complex dynamics with dynamical back-hopping whose probability increases with voltage. We attribute this back-hopping to the instability of the nominally fixed layers.The spin-transfer-torque (STT) manipulation of the magnetization is a cornerstone of modern spintronics. In magnetic tunnel junctions (MTJ), the interplay between magnetizationdependent transport properties 1,2 and the spin torques results in a rich variety of phenomena 3 . After the discovery of STT, it was soon realized 4,5 that the cylindrical symmetry of the magnetic properties in Perpendicular Magnetic Anisotropy (PMA) systems and the resilience to thermal fluctuations that the anisotropy provides would make PMA systems ideal playgrounds to explore STT-induced dynamics. However MTJs with relevant properties became available only a decade after 6 and relied on ultrathin systems where strong interfacial effects can be present 7 ; besides, efficient spin-torque generation requires complex embedding stacks 8,9 in which each additional layers can be a fluctuator strongly coupled to the layer of main interest in a non uniform 8,10 and non local 11 manner. As a consequence the STT-induced magnetization switching in PMA MTJ systems exhibits rich features 12,13 that deserve to be studied, especially as it opens opportunities in information technologies.In this letter, we report single-shot time-resolved measurements of ns-scale STT switching events in PMA MTJs. We detail the electrical signature of the switching and account for its main features using a simple formalism. After an observable nucleation, the reversal proceeds in a non uniform manner with the motion of a domain wall (DW) in a Walker regime; this comes together with intensified excitations in the nominally fixed layers that can result in dynamical back-hopping. This complex dynamics calls for a revisit of the models describing the stability of magnetization and its switching under STT in perpendicularly magnetized confined systems. Our findings are also important for the understanding of other spin torque devices like spin majority gates 14 where the degree of coherence of the magnetization -the occurrence or non occurrence of domain walls-is crucial. The paper is organized as follows. We first describe in detail the properties of the thin films from which the samples are fabricated (section I). The d...