Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

Shuai, Yao; Zhou, Shengqiang; Bürger, Danilo; Helm, M.; Schmidt, Heidemarie

doi:10.1063/1.3601113

Cited by 120 publications

(90 citation statements)

References 23 publications

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“…More Fe 2+ ions imply more oxygen vacancies and a larger leakage current density. [31] In addition, the reduction of the leakage current results from the structural transformation with Ho-doped, Mndoped and (Ho, Mn) co-doped thin films, as discussed above. The leakage current density of the pure BiFeO 3 thin films is larger than that of the BHFO, BFMO, and BHFMO films when it exhibits a rhombohedral structure, which indicates that the rhombohedral structure is closely related to the higher leakage current density.…”

Section: Resultsmentioning

confidence: 93%

Effects of Ho, Mn co-doping on ferroelectric fatigue of BiFeO3 thin films

Chen

Xing

et al. 2015

Electron. Mater. Lett.

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Section: Resultsmentioning

confidence: 93%

Effects of Ho, Mn co-doping on ferroelectric fatigue of BiFeO3 thin films

Chen

Xing

et al. 2015

Electron. Mater. Lett.

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“…4,5 Multiferroic BiFeO 3 6,7 is an example of a material which is known in the two aforementioned fields. It exhibits bipolar resistive switching 8,9 and as a multiferroic material, it possesses ferroelectric DWs. It was shown that electrical properties of DWs in BiFeO 3 differ from those of bulk material.…”

Section: Introductionmentioning

confidence: 99%

Resistive switching in polycrystalline YMnO3 thin films

et al. 2014

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We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by pulsed laser deposition and sandwiched between Au top and Ti/Pt bottom electrodes. The ratio of the resistance in the OFF and ON state is larger than 103. The observed phenomena can be attributed to the formation and rupture of conductive filaments within the multiferroic YMnO3 film. The generation of conductive paths under applied electric field is discussed in terms of the presence of grain boundaries and charged domain walls inherently formed in hexagonal YMnO3. Our findings suggest that engineering of the ferroelectric domains might be a promising route for designing and fabrication of novel resistive switching devices.

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“…While the top interfaces did not suffer annealing during the fabrication process, it is reported theoretically and experimentally that the annealing has the defect-healing effect [24,25]. And, the interface characteristics and resistance switching effect dependent on the annealing have been also investigated [3,26]. Therefore, the asymmetric interface characteristic between top and bottom Pt/MgZnO interfaces is believed in the present study, especially the defect concentration.…”

mentioning

confidence: 88%

Comparative investigation of unipolar resistance switching effect of Pt/Mg0.6Zn0.4O/Pt devices with different electrode patterns for nonvolatile memory application

Chen

Wu²,

Hu³

et al. 2012

Appl. Phys. A

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Electrically induced unipolar resistance switching effects of Mg 0.6 Zn 0.4 O thin films with two top Pt electrodes (MZO-T) and top and bottom Pt electrodes (MZO-B)were demonstrated and compared for nonvolatile memory applications. The obtained resistance ratios of highresistance states (HRS) to low-resistance states (LRS) for MZO-B and MZO-T devices were above seven and four orders of magnitude, respectively, and exhibited a slight degradation with voltage. For both the devices, the conduction mechanisms were dominated by ohmic conduction in LRS and trap-controlled space charge limited current in HRS. Furthermore, a filamentary model was applied to explain the switching behaviors for both the devices considering the asymmetric interface defects and film thickness. The results also suggest that resistance switching behaviors can be regulated by interface defect engineering.Reversible resistance switching effects between high-resistance states (HRS) and low-resistance states (LRS) in metaloxide-metal devices have attracted much attention due to their promising application for future nonvolatile memory devices such as resistance random access memories (RRAMs) [1][2][3][4]. Although various possible physical mechanisms have been proposed to explain these resistance switching effects, the underlying origin of the resistive switching is still a controversial issue. However, more and more investigations suggested the intimate relationship of resistive switching effects with defects in oxide thin films, such as TiO 2 [1], NiO [4], SrTiO 3 [2], and so on.ZnO-based thin films are also promising candidate oxide materials for RRAMs. So far, the resistance switching effects of ZnO-based films such as ZnO [5, 6], S-and Codoped ZnO [7], and Mg 0.2 Zn 0.8 O [8] have also been reported. To enhance the signal-to-noise of the devices, the ultra-high resistance ratio of HRS to LRS of about nine orders of magnitude was obtained in the spinel-MgZnO thin film with high Mg content [9]. Generally, the simple capacitor-like sandwich device structure was applied to investigate the resistance switching effects. For this, the thin films were always integrated directly on the conductive bottom electrode under certain conditions by various deposition techniques, while the top electrodes were usually deposited on the thin-film surface without annealing. Therefore, the devices can be achieved between top and bottom electrodes as well as between two top electrodes. However, due to the different processing conditions, asymmetrical top and bottom metal/film interface characteristics were believed. Although the resistance switching effects of metal-oxidemetal devices with the two electrode patterns above have been reported previously, there are few reports on the comparative investigation between them.In this study, we successfully deposited spinelMg 0.6 Zn 0.4 O thin films on Pt/TiO 2 /SiO 2 /Si substrates by the sol-gel spin coating technique. The unipolar colossal resistance switching behaviors were observed in the capacitorlike Pt/spinel-Mg 0.6...

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Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

Cited by 120 publications

References 23 publications

Effects of Ho, Mn co-doping on ferroelectric fatigue of BiFeO3 thin films

Effects of Ho, Mn co-doping on ferroelectric fatigue of BiFeO3 thin films

Resistive switching in polycrystalline YMnO3 thin films

Comparative investigation of unipolar resistance switching effect of Pt/Mg0.6Zn0.4O/Pt devices with different electrode patterns for nonvolatile memory application

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